RF power LDMOS — 1.96 GHz, 4 W output
The MMRF1014NT1 is an NXP LDMOS RF power transistor delivering 4 W output power at 1.96 GHz with 18 dB gain, tested at 28 V and 50 mA quiescent current. The 68 V drain-source rating provides headroom above the operating bias for load mismatch and peak envelope excursions in linear amplifier stages. LDMOS (Laterally Diffused Metal Oxide Semiconductor) is the established device technology for cellular base-station power amplifiers in the 1.8–2.2 GHz band, valued for its linearity, gain, and thermal stability under high VSWR conditions.
PLD-1.5 package — surface-mount thermal performance
Housed in the PLD-1.5 surface-mount package (Supplier Device Package PLD-1.5), this part is designed for reflow assembly. The exposed backside paddle provides the primary thermal path to the PCB ground plane — the board layout must match the recommended footprint and via pattern to keep the junction temperature within the safe operating area at 4 W continuous output.
Active lifecycle and compliance status
For a BOM line that requires an RF power transistor at 1.96 GHz with 4 W output and 18 dB gain in the PLD-1.5 footprint, this is the exact ordering code.