BFU660F,115

NXP Semiconductors

NXP BFU660F,115 NPN RF transistor, 21 GHz transition frequency, 5.5 V Vceo, 60 mA Ic, 0.6 dB ~ 1.2 dB noise figure at 1.5 GHz ~ 5.8 GHz, SOT-343F package, surface mount.

NXP Semiconductors BFU660F,115
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[IN STOCK] In Stock: 1,519 pcs
$1.72/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

BFU660F,115 specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET typeNPN
Voltage - collector emitter breakdown5.5V
Current - collector (Ic)60mA
DC current gain (hFE) (Min) @ ic, vce90 @ 10mA, 2V
Power - max225mW
Frequency - transition21GHz
Operating temperature150°C (TJ)
Gain12dB ~ 21dB
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOT-343F
Noise figure (dB typ @ f)0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz

Technical details

21 GHz fT — what it buys the front end

The NXP BFU660F,115 is a silicon NPN RF transistor with a 21 GHz transition frequency, making it suited for low-noise amplification up through the 5.8 GHz ISM band. The 0.6 dB to 1.2 dB noise figure across 1.5 GHz to 5.8 GHz tells you this part can sit in the first LNA stage without burying the signal in its own noise — a common failure point when a cheaper wideband transistor gets substituted. Collector current is rated 60 mA max and collector-emitter breakdown at 5.5 V, so keep it in the small-signal role; it is not built for power stages.

SOT-343F footprint — what the rework bench needs to know

Package is SOT-343F, a 4-lead leadless plastic package with the supplier device code 4-DFP. The leads are flush with the body — no visible gull-wing to inspect with a loupe.

Product status is Active, so this transistor is still in normal production. No last-time-buy notice, no end-of-life clock ticking.

BFU660F,115
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