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NXP Semiconductors AFT05MP075NR1
NXP Semiconductors

AFT05MP075NR1 RF MOSFET LDMOS, 70W, 520MHz, 18.5dB Gain

MPNAFT05MP075NR1
End of Life

NXP AFT05MP075NR1 RF MOSFET LDMOS, dual configuration, 520 MHz, 70 W output, 18.5 dB gain, 12.5 V test, 40 V rated, TO-270 WB-4 surface mount.

$21.17Ref. price · indicative, final on quote
AFT05MP075NR1 datasheet
PackagingTO-270AB
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

AFT05MP075NR1 Technical Specifications
ParameterValue
Mounting typeSurface Mount
Voltage - test12.5 V
Voltage - rated40 V
Current - test400 mA
Power - output70W
Frequency520MHz
Gain18.5dB
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyLDMOS
ConfigurationDual
CaseTO-270AB

Product details

70 W LDMOS for 520 MHz base-station driver stages

The NXP AFT05MP075NR1 is a dual LDMOS RF power transistor delivering 70 W output at 520 MHz with 18.5 dB gain, tested at 12.5 V. It is designed for 40 V rated operation in cellular base-station driver amplifiers and industrial RF energy applications where linearity and efficiency are required.

Gain and output power at 520 MHz

The 18.5 dB gain at 520 MHz means a 0.5 W drive signal produces the full 70 W output, reducing the number of pre-driver stages needed in the transmit chain. The 40 V drain rating provides headroom for load mismatch and supply ripple in 12.5 V nominal systems.

TO-270 WB-4 package and thermal path

Housed in the TO-270 WB-4 surface-mount package, the wide-body flange offers a low thermal resistance path to the PCB ground plane. The dual die configuration shares the common source pad, simplifying the layout for push-pull or balanced amplifier topologies.

Frequently asked questions

What is the typical application for AFT05MP075NR1?

This LDMOS transistor is typically used in 520 MHz cellular base-station driver amplifiers and industrial RF energy systems where 70 W output power and 18.5 dB gain are needed.

Is AFT05MP075NR1 RoHS compliant?

Yes, it is ROHS3 compliant.