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NXP Semiconductors A3G26D055NT4
NXP Semiconductors

A3G26D055NT4 GaN RF MOSFET, 13.9 dB Gain, 100 MHz–2.69 GHz

MPNA3G26D055NT4
End of Life

NXP A3G26D055NT4 GaN RF MOSFET, 8 W output at 48 V, 13.9 dB gain, 100 MHz–2.69 GHz, 6-LDFN exposed pad, surface mount, ROHS3 compliant.

$29.28Ref. price · indicative, final on quote
A3G26D055NT4 datasheet
Packaging6-LDFN Exposed Pad
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

A3G26D055NT4 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typeGaN
Voltage - test48 V
Voltage - rated125 V
Current - test40 mA
Power - output8W
Frequency100MHz ~ 2.69GHz
Gain13.9dB
PackageTape & Reel (TR); Cut Tape (CT)
Case6-LDFN Exposed Pad

Product details

GaN RF MOSFET for broadband driver and final stages

The NXP A3G26D055NT4 is a GaN RF power transistor in a 6-LDFN exposed-pad package, delivering 8 W output power at 48 V with 13.9 dB gain across 100 MHz to 2.69 GHz. It targets cellular infrastructure, broadband amplifiers, and ISM-band transmitters where GaN efficiency and bandwidth outperform LDMOS.

Key parametrics for RF design

Rated drain-source voltage is 125 V, providing headroom above the 48 V test rail for load mismatch and peak envelope excursions. The 40 mA quiescent current sets the class-AB bias point for linearity.

Frequently asked questions

What is the frequency range and power output of A3G26D055NT4?

It operates from 100 MHz to 2.69 GHz with 8 W output power at 48 V and 13.9 dB gain, covering cellular, ISM, and broadband bands.