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NXP Semiconductors MRF101AN

NXP MRF101AN RF LDMOS Transistor, 115W, TO-220-3

MPNMRF101AN
End of Life

NXP MRF101AN LDMOS RF transistor, 115W power output, 21.1dB gain, 1.8MHz~250MHz frequency range, TO-220-3 package, 133V rated voltage, ROHS3 compliant.

$26.4Ref. price · indicative, final on quote
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
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Specifications

MRF101AN Technical Specifications
ParameterValue
FET typeLDMOS
Voltage - test50 V
Voltage - rated133 V
Current - test100 mA
Current rating10µA
Power - output115W
Frequency1.8MHz ~ 250MHz
Gain21.1dB
PackageTube
CaseTO-220-3

Product details

RF power transistor for HF/VHF linear stages

The NXP MRF101AN is an LDMOS RF power transistor delivering 115W output across 1.8 MHz to 250 MHz. It is designed for 50V nominal supply operation and achieves 21.1 dB gain at the 100 mA test current. The TO-220-3 package simplifies heatsinking and board mounting in industrial RF generators, broadcast transmitters, and amateur radio power amplifiers.

Gain and power — what the numbers mean for your PA

21.1 dB gain at 50V and 100 mA means a single stage can bring a typical 1W driver to over 100W output — useful for reducing driver chain complexity in 100W-class linear amplifiers. The 115W output is the rated power at the specified test condition; actual usable power in a 50-ohm system depends on heatsinking, matching network loss, and the peak-to-average ratio of the modulation scheme. The 133V rated voltage gives headroom for load mismatch transients without immediate breakdown.

Frequency range and application fit

Covering 1.8 MHz to 250 MHz, the MRF101AN spans the 160m through 2m amateur bands. The LDMOS structure offers better linearity and gain flatness than bipolar RF power transistors across this range, with lower temperature sensitivity of the bias point.

Package and thermal considerations

TO-220-3 is a standard through-hole power package with the drain tab as the centre lead. Mount with a mica or sil-pad insulator and thermal compound to a heatsink rated for the dissipation. The 10 µA off-state leakage at 133V is negligible; the real thermal load is the product of drain current and drain-source voltage during conduction. For 115W RF output at 50% efficiency, expect roughly 115W dissipation — size the heatsink accordingly for the ambient temperature and duty cycle.

Sourcing and lifecycle

No end-of-life notice or last-time-buy schedule is in effect. The part is available through independent distribution and can be quoted to order for both prototype quantities and production volumes. For dual-source planning, NXP offers other LDMOS parts in the same power class — confirm pin-compatibility and matching network requirements before substituting.

Frequently asked questions

What is the equivalent replacement for MRF101AN?

NXP offers other LDMOS transistors in the 100W class, but no single pin-compatible equivalent is listed in the available documentation. Verify package, gain, and matching requirements before substituting.

Is MRF101AN suitable for my 100W amplifier design?

Yes — the MRF101AN is rated for 115W output power and 21.1 dB gain across 1.8-250 MHz, making it a strong candidate for 100W-class linear amplifiers in HF/VHF bands. Ensure your supply is 50V nominal and your heatsink can handle the dissipation.