2.14 GHz LDMOS driver with 32.6 dB gain
The NXP MW7IC2020NT1 is a 28 V LDMOS RF power transistor designed for the 2.14 GHz band, delivering 2.4 W output with a gain of 32.6 dB. The 65 V drain rating provides operating margin for 28 V bias, typical in cellular base station driver stages and repeater amplifiers. The 24-PQFN (8x8) package integrates the thermal slug for direct PCB heat sinking.
Gain and output power for PA chain budgeting
At 40 mA test current and 28 V drain, the 32.6 dB gain means a 0 dBm input produces over 2 W output — enough to drive a final-stage LDMOS or GaN transistor without an intermediate pre-driver. The 2.4 W output at 2.14 GHz suits W-CDMA and LTE small-cell power amplifiers where linearity and efficiency matter more than raw peak power.