NXP MRF101BN LDMOS RF power transistor, 115W output, 21.1dB gain, 1.8-250 MHz, 50V test, TO-220-3, ROHS3, Active.
| Parameter | Value |
|---|---|
| FET type | LDMOS |
| Voltage - test | 50 V |
| Voltage - rated | 133 V |
| Current - test | 100 mA |
| Current rating | 10µA |
| Power - output | 115W |
| Frequency | 1.8MHz ~ 250MHz |
| Gain | 21.1dB |
| Package | Tube |
| Case | TO-220-3 |
The NXP MRF101BN is an LDMOS RF power transistor rated for 115 W output across 1.8 MHz to 250 MHz. It's built for the HF-to-VHF band — think broadcast transmitters, ISM generators, and amateur radio power amplifiers. The 21.1 dB gain at 100 mA test current means a modest driver stage can push it to full output. The 133 V drain rating gives headroom for 50 V supply designs.
It comes in a TO-220-3 package. The tab is the drain.
Yes, the MRF101BN is listed as Active and ROHS3 compliant. It is a current-production NXP device with no end-of-life notice.
The MRF101BN is an NXP LDMOS RF power transistor rated for 115 W output from 1.8 MHz to 250 MHz. It delivers 21.1 dB gain at 100 mA test current and comes in a TO-220-3 package.
Yes. At 115 W output the device dissipates significant heat. The TO-220-3 package is designed for mounting to a heatsink. Use thermal compound or a pad between the tab and the heatsink.