22 GHz transition frequency and 16 dB gain for LNA front-ends
The BFR460L3E6327XTMA1 is an NPN RF transistor with a 22 GHz transition frequency and a gain of 16 dB, designed for low-noise amplifier stages in the 1.8 GHz to 3 GHz band where its noise figure sits at 1.1 dB to 1.35 dB. The 5.8 V collector-emitter breakdown and 50 mA maximum collector current define the bias point for a small-signal LNA — this is not a power transistor; it is a low-noise gain block for the receive chain.
PG-TSLP-3-1 footprint and 150°C junction rating
Housed in the PG-TSLP-3-1 package (SC-101, SOT-883 standard), this is a three-lead surface-mount device with a leadless plastic package — the solder pads are on the bottom, so the PCB land pattern must match the Infineon TSLP-3-1 footprint exactly. Junction temperature is rated to 150°C, which gives headroom in a compact RF module where the transistor sits near the PA stage.