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STMicroelectronics PD57060-E

STMicroelectronics PD57060-E RF MOSFET LDMOS, 945MHz 60W

MPNPD57060-E
End of Life

STMicroelectronics PD57060-E RF LDMOS transistor, PowerSO-10 exposed pad, 945 MHz, 60 W output, 14.3 dB gain at 28 V / 100 mA test, 65 V rated, 7 A rated.

$54.44Ref. price · indicative, final on quote
STMicroelectronics PD57060-E datasheet (PDF)
PackagingPowerSO-10 Exposed Bottom Pad
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

PD57060-E specifications
ParameterValue
FET typeLDMOS
Voltage - test28 V
Voltage - rated65 V
Current - test100 mA
Current rating7A
Power - output60W
Frequency945MHz
Gain14.3dB
PackageTube
CasePowerSO-10 Exposed Bottom Pad

Product details

The STMicroelectronics PD57060-E is an N-channel LDMOS RF power transistor designed for 945 MHz operation, delivering 60 W output with 14.3 dB gain when tested at 28 V and 100 mA. The 65 V rated drain-source voltage and 7 A continuous current rating give headroom for Class AB or Class C amplifier stages in base station transmitters, industrial RF generators, and ISM-band applications.

Gain and bias — what the test conditions tell you

The 14.3 dB gain is specified at 945 MHz with Vdd = 28 V and Idq = 100 mA.

Frequently asked questions

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What is the pinout of PD57060-E?

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