RF front-end NPN transistor for low-noise amplification up to several GHz
The Infineon BFR360FH6327XTSA1 is an NPN silicon RF bipolar transistor designed for low-noise amplifier and driver stages in wireless infrastructure, satellite TV, and ISM-band receivers. Its key RF parameters — 15.5 dB gain at 1.8 GHz, 14 GHz transition frequency, and a typical noise figure of 1 dB at 1.8 GHz — make it a fit for the first LNA stage where sensitivity matters. The 9 V collector-emitter breakdown voltage and 35 mA maximum collector current keep it in the low-power signal chain, not the final PA. Packaged in a SOT-723 (PG-TSFP-3), it is a very small surface-mount device suited for compact module designs.
The 14 GHz transition frequency and 1 dB noise figure at 1.8 GHz suit GPS/GLONASS and 1.8 GHz cellular LNA stages.
9 V VCEO and 35 mA Ic — supply and power limits
The 9 V collector-emitter breakdown and 35 mA maximum collector current define the supply and power limits.
SOT-723 package — footprint and assembly notes
The SOT-723 (PG-TSFP-3) is a three-lead surface-mount package for reflow soldering.