RF power transistor for 870 MHz infrastructure and industrial applications
The NXP AFT09MS007NT1 is an LDMOS RF power transistor designed for the 870 MHz band, delivering 7.3W output power with 15.2dB gain when tested at 7.5 V and 100 mA bias. The 30 V drain rating provides headroom for Class A or AB amplifier stages in base station driver chains, repeater amplifiers, and industrial RF generators. The PLD-1.5W surface-mount package is a proprietary NXP land-grid format that keeps the thermal path short — the exposed backside contact conducts heat directly to the PCB ground plane, which is the primary consideration for the layout engineer.
At 7.3W output power, this transistor sits in the medium-power tier for UHF LDMOS devices. It is sized to drive a final-stage high-power transistor (50W to 300W class) or to serve as the final stage in a compact repeater or remote radio head where 5 to 8 watts meets the link budget. The 15.2dB gain means a typical 0 dBm to +5 dBm input from a preceding gain block or modulator IC will drive it to full output — no intermediate driver stage needed. The 100 mA quiescent current at 7.5 V drain bias is the starting point for Class AB linearity; the bias network should be temperature-compensated because LDMOS threshold voltage drifts negative with die temperature.
PLD-1.5W package and thermal reality
The PLD-1.5W is a low-inductance surface-mount package with a large backside contact for heat sinking.
The ROHS3 compliance is confirmed, which covers the current EU RoHS exemption landscape.