150W LDMOS for VHF/UHF power stages
The NXP MRFE6VP5150GNR1 is a dual LDMOS RF power transistor in a TO-270 Gull package, delivering 150W output at 230 MHz with 26.1 dB gain from a 50 V supply. The dual-die configuration suits push-pull or balanced amplifier topologies common in industrial RF heating, plasma generators, VHF/UHF broadcast transmitters, and medical diathermy equipment. Bias at 100 mA per side sets the class-AB operating point; the high gain reduces the driver-stage component count.
Package and mounting — TO-270 wide-body gull-wing
Surface-mount TO-270 Gull package with a wide-body footprint and gull-wing leads.