RF power transistor for 880 MHz base-station and ISM amplifiers
The NXP MRFE6S9060NR1 is an LDMOS FET designed for 880 MHz RF power amplification, delivering 14 W output with 21.1 dB gain when biased at 28 V and 450 mA quiescent current. The 66 V drain-source rating provides headroom for mismatched loads and high-VSWR conditions common in cellular infrastructure and industrial RF heating applications. In a 50-ohm system, the 21.1 dB gain figure means a typical driver stage needs only about 100 mW of drive power to reach full rated output, which simplifies the gain chain and reduces the number of pre-driver stages.
Surface-mount TO-270-2 — footprint and thermal management
It is not a through-hole bolt-down package; the board-level footprint uses the large-source-tab pad for both electrical connection and heat sinking. Thermal management requires a copper spreader and thermal vias under the source tab to keep the junction within limits at the 14 W continuous output level.