RF power transistor for 512 MHz amplifier stages
The NXP MRFE6VS25LR5 is an LDMOS RF power transistor delivering 25 W output at 512 MHz with a gain of 25.9 dB, tested at 50 V and 10 mA. It comes in a NI-360 package for chassis-mount installation, rated to 133 V. This part is designed for base station, ISM, and broadcast transmitter final stages where linearity and efficiency at UHF frequencies are critical.
Gain and output — what they mean for the amplifier chain
At 512 MHz, 25.9 dB gain and 25 W output at 50 V test condition suit medium-power UHF amplifier stages.
Package and mounting — NI-360 chassis mount
The NI-360 flange package is designed for direct chassis or heatsink mounting via screws.
Lifecycle and compliance
It is ROHS3 compliant, so it meets current European and global restrictions on hazardous substances. For a BOM line, this means no immediate LTB risk and no compliance-driven redesign needed.
