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ROHM UMG8NTR — dual NPN pre-biased (bias resistor type) transistor, 50 V VCEO, 100 mA Ic, 4.7 kΩ base / 47 kΩ base-emitter resistors, 250 MHz fT, 150 mW, surface-mount UMT5 (SOT-353) package, ROHS3 compliant.

Analog Devices MAX5490 series matched resistor-divider network, MAX5490MB02000, 100k resistance, ±0.025% tolerance, 35ppm/°C tempco, SOT-23-3 surface-mount package, Bulk.

Infineon BCR 192 series PNP pre-biased transistor, SC-75 / SOT-416 package, 50 V Vce, 100 mA Ic, 250 mW, 200 MHz ft, with integrated 22 kΩ base resistor and 47 kΩ base-emitter resistor.

Toshiba RN2413,LXHF PNP pre-biased transistor, 50V VCEO, 100mA IC, 200MHz fT, 47kΩ base resistor, AEC-Q101, SOT-23-3 package.

Toshiba Semiconductor RN4988 series pre-biased dual transistor, 1 NPN + 1 PNP, SOT-363 surface-mount package, 50 V collector-emitter breakdown, 100 mA collector current, 200 mW power dissipation, 22 kΩ base resistor, 47 kΩ emitter-base resistor.

Infineon BCR108SE6327BTSA1, dual NPN pre-biased transistor, 50V VCEO, 100mA IC, 250mW, 170MHz, 2.2kΩ base resistor, 47kΩ emitter-base resistor, SOT-363 package.

Infineon BCR 185T E6327 PNP pre-biased digital transistor, SC-75 SOT-416 surface-mount package, 100 mA collector current, 50 V Vce breakdown, 200 MHz transition frequency, built-in 10 kΩ base resistor and 47 kΩ emitter-base resistor.

Toshiba Semiconductor RN1711,LF dual NPN pre-biased transistor, 50V VCEO, 100mA Ic, 200mW, 10kΩ base resistor, SOT-353 surface mount.

Infineon BCR583 digital transistor, silicon NPN with integrated bias resistor, active lifecycle, Bulk shipping medium.

Toshiba Semiconductor RN2110 series PNP pre-biased transistor, 50 V collector-emitter breakdown, 100 mA collector current, 4.7 kOhms base resistor, SC-75 SOT-416 surface-mount package, SSM supplier device package.

Toshiba Semiconductor RN2311 series PNP pre-biased transistor, 50 V collector-emitter breakdown, 100 mA collector current, 10 kOhm base resistor, 200 MHz transition frequency, SC-70 SOT-323 surface-mount package.

Toshiba Semiconductor NPN Pre-Biased transistor, RN1417,LF, SOT-23-3 (S-Mini) package, 50 V Vce, 100 mA Ic, 200 mW, 10 kOhms base resistor, 4.7 kOhms emitter-base resistor.

ROHM Semiconductor Automotive AEC-Q101 PNP Pre-Biased Transistor, 500 mA, 40 V, 200 mW, 2.2 kOhm base resistor, 200 MHz, SOT-23-3 SST3 package, Tape & Reel.

ROHM EMG5T2R dual NPN pre-biased transistor, 250 MHz transition frequency, 150 mW max power, 50 V VCEO, 10 kΩ base resistor, 47 kΩ emitter-base resistor, EMT5 surface-mount package.

Rohm Semiconductor UMG4NTR, dual NPN pre-biased transistor, 50V Vce, 100mA Ic, 250MHz fT, 10kΩ base resistor, 150mW max power, SOT-353 surface-mount package.

ROHM Semiconductor UMH9NTN, Dual NPN Pre-Biased (Digital) Transistor, 50V Vce, 100mA Ic, 250MHz, 150mW, 10kΩ/47kΩ resistor ratio, SOT-363 (UMT6) package, Surface Mount, Tape & Reel.

ROHM Semiconductor EMH9T2R, dual NPN pre-biased transistor, 50 V VCEO, 100 mA Ic, 250 MHz ft, 10 kΩ base resistor, 47 kΩ base-emitter resistor, SOT-563 / SOT-666 package, EMT6 supplier device package, 150 mW power dissipation, surface mount, ROHS3 compliant.

Infineon BCR116WE6327BTSA1 NPN pre-biased digital transistor, 50 V VCEO, 100 mA IC, 4.7 kΩ base resistor, 47 kΩ emitter-base resistor, 150 MHz fT, SOT-323 package, 250 mW power dissipation.

Infineon BCR 129 E6327 NPN pre-biased transistor, 50 V collector-emitter breakdown, 100 mA collector current, 10 kOhm base resistor, 150 MHz transition frequency, PG-SOT23-3-11 package, surface mount, 200 mW power dissipation.

Infineon BCR129WH6327XTSA1 NPN pre-biased digital transistor, 50 V collector-emitter breakdown, 100 mA collector current, 10 kOhms base resistor, 150 MHz transition frequency, PG-SOT323 package, Tape & Reel.

Infineon BCR 142F E6327 NPN pre-biased transistor, 50 V Vce, 100 mA Ic, 150 MHz ft, integrated 22 kΩ base resistor and 47 kΩ emitter-base resistor, SOT-723 surface-mount package, 250 mW power dissipation.

Infineon BCR 146T E6327 NPN pre-biased transistor, 50 V Vceo, 70 mA Ic, 150 MHz fT, integrated 47 kΩ base resistor R1 and 22 kΩ emitter-base resistor R2, in SC-75 SOT-416 surface-mount package.

Infineon BCR166E6327HTSA1 PNP pre-biased transistor, 50 V collector-emitter breakdown, 100 mA collector current, 4.7 kOhms base resistor, 47 kOhms emitter-base resistor, 160 MHz transition frequency, SOT-23-3 package, 200 mW power dissipation.

Infineon BCR573E6327HTSA1 PNP pre-biased transistor, 50 V VCEO, 500 mA Ic, 150 MHz fT, 1 kΩ base resistor (R1), 10 kΩ emitter-base resistor (R2), SOT-23-3 package, 330 mW power dissipation.

ROHM EMH3T2R dual NPN pre-biased transistor, 50V Vce breakdown, 100mA Ic, 4.7kΩ base resistor, 250MHz transition frequency, SOT-563 surface-mount package, 150mW max power dissipation.

Infineon BCR108E6433HTMA1 NPN pre-biased transistor, 100 mA collector current, 50 V Vce breakdown, 170 MHz transition frequency, integrated 2.2 kΩ base resistor and 47 kΩ emitter-base resistor, SOT-23-3 package, 200 mW power dissipation, NRND lifecycle.

Infineon BCR135SH6827XTSA1 dual NPN pre-biased transistor, 50 V Vceo, 100 mA Ic, 10kΩ base resistor, 47kΩ emitter-base resistor, 150 MHz transition frequency, 250 mW, SOT-363.

Infineon BCR 164T E6327 PNP pre-biased transistor, SC-75 SOT-416, 50 V VCEO, 100 mA IC, 250 mW, 160 MHz fT, built-in 4.7 kΩ base resistor and 10 kΩ base-emitter resistor.

Infineon BCR 179L3 E6327 PNP pre-biased digital transistor, 50 V Vce, 100 mA Ic, 10 kOhm base resistor, 150 MHz fT, SC-101/SOT-883 package, PG-TSLP-3-4, Tape & Reel.

Toshiba RN2115MFV,L3F PNP pre-biased transistor, 50 V collector-emitter breakdown, 100 mA continuous collector current, SOT-723 surface-mount package, built-in bias resistors R1=2.2 kΩ and R2=10 kΩ.

Infineon BCR 116T E6327, NPN - Pre-Biased, 50 V VCEO, 100 mA IC, 150 MHz fT, R1 4.7 kOhms, R2 47 kOhms, SC-75 SOT-416, Surface Mount, Tape & Reel.

Infineon BCR185E6327 PNP pre-biased transistor, AEC-Q101 qualified, 200 mW, SOT-23-3 surface mount package, 50 V VCEO, 100 mA IC, 200 MHz fT.

Infineon BCR 196T E6327, PNP pre-biased digital transistor, 50 V Vceo, 70 mA Ic, 150 MHz ft, R1=47k / R2=22k, SC-75 (SOT-416), surface mount, Tape & Reel.

Infineon BCR 503 B6327, NPN - Pre-Biased, 500 mA Ic, 50 V Vce, 100 MHz fT, 330 mW, SOT-23-3, Tape & Reel.

Analog Devices nanoPower series, MAX9634TERS+T, a single-circuit current sense amplifier in a 4-UCSP (1x1) package, drawing 1.1 µA supply current with a 125 kHz gain-bandwidth product and 100 µV input offset voltage.

Toshiba RN2106MFV,L3XHF(CT, Automotive AEC-Q101, PNP Pre-Biased Transistor, 50 V VCEO, 100 mA Ic, 150 mW, SOT-723 (VESM) package, built-in bias resistors R1=4.7 kΩ, R2=47 kΩ.

Texas Instruments TPS62932DRLR, step-down buck regulator, adjustable output 0.8 V to 22 V, 2 A continuous, SOT-583 package, -40°C to 150°C junction temperature.

Toshiba RN1406,LF NPN pre-biased transistor, 50V Vce, 100mA Ic, 250MHz fT, internal R1=4.7 kOhms R2=47 kOhms, S-Mini (SC-59/SOT-23-3) package, surface mount, 200mW.

ROHM Semiconductor UMG11NTR, Dual NPN Pre-Biased Digital Transistor, 50V Vce, 100mA Ic, 150mW, 250MHz ft, Built-in R1=2.2kΩ, R2=47kΩ, UMT5 Surface-Mount Package.

Infineon BCR141WH6327 NPN pre-biased transistor, 50 V VCEO, 100 mA Ic, 130 MHz fT, 22 kΩ base and emitter resistors, SC-70/SOT-323 package, surface mount.

Infineon BCR198WH6327XTSA1 PNP pre-biased transistor, 50 V VCEO, 100 mA IC, 190 MHz fT, 250 mW, SC-70/SOT-323 package.

Texas Instruments INA126, Instrumentation Amplifier, 1 Circuit, 200 kHz -3dB Bandwidth, 0.4 V/µs Slew Rate, 2.7 V to 36 V Supply, 8-VSSOP Package.

Analog Devices MAX5183BEEI+T, 10-bit dual DAC, current-source architecture, unbuffered voltage output, 25µs settling, parallel interface, 28-QSOP package, -40°C to +85°C.

Analog Devices LT1991CMS#PBF, Programmable Gain Amplifier, 1 Circuit, Rail-to-Rail Output, 560 kHz Gain Bandwidth, 0.12 V/µs Slew Rate, 2.7 V to 36 V Supply, 10-MSOP, Tube.

Toshiba RN1415,LF, NPN Pre-Biased, 50 V Vce, 100 mA Ic, 250 MHz ft, 200 mW, SOT-23-3, ROHS3.

Toshiba Semiconductor RN4907,LF dual NPN/PNP pre-biased transistor, 50 V, 100 mA, 200 mW, 200 MHz, SOT-363 (US6), Tape & Reel.

Texas Instruments TPS62912RPUR, Step-Down Buck Regulator, Adjustable Output, 2 A, 3 V to 17 V Input, 1 MHz / 2.2 MHz Switching, -40°C to 150°C, 10-VQFN (2x2 mm) Package.

Toshiba RN2304,LXHF PNP pre-biased transistor, 50 V collector-emitter breakdown, 100 mA collector current, 47 kOhm base and emitter resistors, SC-70 SMD package, Tape & Reel.

Toshiba RN1608(TE85L,F) dual NPN pre-biased transistor, 50V VCEO, 100mA IC, 300mW, 250MHz fT, integrated R1=22kΩ R2=47kΩ, SC-74 (SOT-457) surface mount.

Infineon BCR162E6327HTSA1, PNP - Pre-Biased, 50 V VCEO, 100 mA IC, 200 mW, 200 MHz, SOT-23-3, PG-SOT23, Tape & Reel.

Maxim Integrated Simple Swapper™ hot swap controller, MAX5901AAETT+, single-channel, -9V to -100V supply range, 500 µA supply current, 6-WDFN exposed pad package, -40°C to 85°C operating temperature.

Texas Instruments 74LVC series hex non-inverting buffer, SN74LVC07APWR, open-drain outputs, 1.65V-5.5V supply, 24 mA sink, 14-TSSOP package, -40°C to 125°C.

Toshiba Semiconductor RN4906FE,LF(CT dual NPN/PNP pre-biased transistor, SOT-563 surface-mount, 100 mA collector, 50 V, 100 mW, built-in bias resistors 4.7k / 47k.

Rohm IMH9AT110 dual NPN pre-biased transistor, 50 V Vceo, 100 mA Ic, 250 MHz ft, 300 mW, SC-74 SOT-457 surface mount, Tape & Reel.

Texas Instruments TPS63010YFFR, a synchronous buck-boost switching regulator, adjustable output, 2A switch, 2.4 MHz switching frequency, in a 20-DSBGA package.

Infineon BCR 183F E6327, PNP - Pre-Biased, 50 V VCEO, 100 mA IC, 200 MHz, 10 kOhms R1/R2, SOT-723, Surface Mount, 250 mW.

Texas Instruments TPS61072DDCR step-up (boost) DC-DC converter, adjustable output, 500 mA switch, 600 kHz switching frequency, synchronous rectification, SOT-23-6 package, -40°C to 85°C operation.

Texas Instruments Automotive, AEC-Q100, 74HC series, SN74HC166AIPWRG4Q1, 8-bit parallel or serial to serial shift register, push-pull output, 2V-6V supply, -40C to 85C, 16-TSSOP surface mount.

Texas Instruments BQ24266RGER single-cell Li-Ion battery charger IC, USB interface, 3A max charge current, 24-VFQFN Exposed Pad package, -40°C to 85°C operating temperature.

Analog Devices DS2401Z+, Silicon Serial Number IC, Surface Mount, TO-261-4 / TO-261AA, SOT-223-3, Tube, Active.