Dual NPN pre-biased in a SOT-363 — BOM-fit for low-current switching
The Infineon BCR135SH6827XTSA1 integrates two NPN pre-biased transistors with internal 10 kΩ base and 47 kΩ emitter-base resistors in a single PG-SOT363-PO package. Each transistor is rated for 50 V collector-emitter breakdown and 100 mA collector current, with a 150 MHz transition frequency. The pre-biased resistor network eliminates two external resistors per transistor channel, saving board area and reducing pick-and-place cost in high-volume designs. Typical applications include logic-level interface, relay and solenoid drivers, and inverter gate control where the 10kΩ base resistor sets the on-state drive current.
Last Buy — plan the BOM transition now
BCR135SH6827XTSA1 carries a Last Buy lifecycle status. For a pin-compatible replacement, evaluate the base product family BCR135S in alternative package variants or a discrete dual-NPN array with equivalent resistor values.
The 300 mV Vce saturation at 500 µA base, 10 mA collector gives a conduction loss floor of 3 mW per transistor at 10 mA — negligible in a 250 mW package budget. The 70 minimum hFE at 5 mA, 5 V ensures consistent gain across the operating region; the pre-biased resistors fix the base current, so the actual collector current is set by the load impedance. Surface-mount assembly in the 6-VSSOP / SC-88 / SOT-363 footprint — the PG-SOT363-PO supplier package code maps to a 2.0 mm × 2.1 mm body with 0.65 mm pin pitch. Standard reflow profile; no exposed thermal pad, so the 250 mW power limit is derated by ambient temperature per the datasheet curve.