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Infineon Technologies BCR129E6327 — Discrete Semiconductors

BCR129E6327 NPN Pre-Biased Transistor, 100 mA, 50 V, SOT-23

MPNBCR129E6327
Active

Infineon BCR129E6327 NPN pre-biased transistor, 50 V VCEO, 100 mA Ic, 150 MHz fT, 10 kΩ base resistor, 200 mW, SOT-23-3 package, active.

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Specifications

BCR129E6327 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce120 @ 5mA, 5V
Power - max200 mW
Frequency150 MHz
PackageBulk
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)10 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

Pre-biased NPN in a SOT-23 — what the integrated resistor buys you

The Infineon BCR129E6327 is an NPN pre-biased transistor (BRT) that integrates a 10 kΩ base resistor (R1) in the same SOT-23-3 package. That one resistor eliminates an external passive and a pick-and-place step, shrinking the BOM for simple switching loads up to 100 mA collector current and 50 V collector-emitter breakdown. The 150 MHz transition frequency keeps switching losses low in low-speed relay drivers, LED indicators, and logic-level interface circuits.

At 200 mW maximum power dissipation in the SOT-23 body, the practical continuous collector current sits well below the 100 mA absolute maximum unless you keep VCE low. For a 5 V rail switching a 50 mA load, the VCE(sat) of 300 mV at 500 µA base drive and 10 mA collector current gives a rough dissipation of 15 mW — plenty of margin. Push toward 100 mA at higher VCE, and the junction temperature climbs fast; the 200 mW limit is the hard ceiling for thermal design.

Frequently asked questions

What is the maximum power dissipation of BCR129E6327?

The maximum power dissipation is 200 mW. This is the total power the SOT-23 package can dissipate at 25 °C ambient; derate for higher operating temperatures.

Can BCR129E6327 be used as a switch?

Yes — the pre-biased NPN is designed for switching applications. With a 10 kΩ base resistor and a minimum DC current gain of 120 at 5 mA, 5 V, it saturates with a 300 mV VCE(sat) at 500 µA base drive and 10 mA collector current, making it suitable for driving relays, LEDs, and logic-level loads up to 100 mA.