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ROHM Semiconductor DTB123TCHZGT116 — Discrete Semiconductors
ROHM Semiconductor

ROHM DTB123TCHZGT116 PNP Pre-Biased, 500 mA, 40 V, SOT-23-3

MPNDTB123TCHZGT116
End of Life

ROHM Semiconductor Automotive AEC-Q101 PNP Pre-Biased Transistor, 500 mA, 40 V, 200 mW, 2.2 kOhm base resistor, 200 MHz, SOT-23-3 SST3 package, Tape & Reel.

$0.4Ref. price · indicative, final on quote
DTB123TCHZGT116 datasheet
PackagingTO-236-3, SC-59, SOT-23-3
StockIn Stock (30)
Lead timeIn Stock wk
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

DTB123TCHZGT116 Technical Specifications
ParameterValue
SeriesAutomotive, AEC-Q101
Mounting typeSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown40 V
Current - collector (Ic)500 mA
Current - collector cutoff500nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce100 @ 50mA, 5V
Power - max200 mW
Frequency200 MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)2.2 kOhms
Vce saturation (Max) @ ib, ic300mV @ 2.5mA, 50mA

Product details

AEC-Q101 rated for under-hood switching

The ROHM DTB123TCHZGT116 is a PNP pre-biased transistor in the SOT-23-3 package, qualified to AEC-Q101 for automotive applications. The 2.2 kOhm base resistor (R1) is integrated on-chip — one external resistor per channel is eliminated, which tightens the BOM count on dense I/O boards. Rated for 500 mA collector current (Ic max) and 40 V collector-emitter breakdown voltage, this part handles low-side switching of solenoids, relays, and indicator loads in engine bay or cabin modules. The 200 mW power dissipation ceiling means the junction temperature rise, not the 500 mA headline, sets the real continuous current in a 85°C ambient.

Pre-biased topology and gain floor

The integrated bias network (R1 = 2.2 kOhm) sets the base current for a given collector load — the transistor turns on when the input voltage exceeds the base-emitter threshold plus the drop across R1. Transition frequency (fT) is 200 MHz, so the part switches cleanly at PWM frequencies up to several hundred kilohertz — a common requirement for automotive lamp dimming or solenoid dither. Collector cutoff current is 500 nA max (ICBO), which keeps leakage negligible in off-state at elevated temperatures.