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Toshiba Semiconductor RN2106MFV,L3XHF(CT — Crystals & Oscillators

RN2106MFV,L3XHF(CT Toshiba PNP Pre-Biased Transistor

MPNRN2106MFV,L3XHF(CT
End of Life

Toshiba RN2106MFV,L3XHF(CT, Automotive AEC-Q101, PNP Pre-Biased Transistor, 50 V VCEO, 100 mA Ic, 150 mW, SOT-723 (VESM) package, built-in bias resistors R1=4.7 kΩ, R2=47 kΩ.

$0.33Ref. price · indicative, final on quote
PackagingSOT-723
SeriesAutomotive, AEC-Q101
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

RN2106MFV,L3XHF(CT specifications
ParameterValue
SeriesAutomotive, AEC-Q101
MountingSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce80 @ 10mA, 5V
Power - max150 mW
Frequency250 MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOT-723
Resistor - base (R1)4.7 kOhms
Resistor - emitter base (R2)47 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 5mA

Product details

Active production, AEC-Q101 qualified

The RN2106MFV,L3XHF(CT: That means it is released for automotive-grade builds and is not a short-life or NRND part — no last-time-buy pressure on this BOM line.

Built-in bias resistors simplify the BOM

This PNP pre-biased transistor integrates a 4.7 kΩ base resistor (R1) and a 47 kΩ emitter-base resistor (R2). The bias network is on-chip, so you save one or two passives per position and shrink the placement footprint.

SOT-723 (VESM) — small, but layout-aware

The SOT-723 package, also called VESM, is a small body with a tight lead pitch. It is one of the smallest packages for a pre-biased transistor. The land pattern is tight — confirm the solder-paste aperture and stencil thickness for a reliable fillet. The 150 mW power limit means the thermal path is through the collector pad; keep the copper pour generous under the part.

Switching performance and saturation

With a 250 MHz transition frequency and a Vce(sat) of 300 mV at 500 µA base, 5 mA collector, this transistor handles low-current switching up into the MHz range. The DC current gain minimum of 80 at 10 mA, 5 V gives a solid drive margin for logic-level loads.

Frequently asked questions

What are the built-in resistor values of the RN2106MFV?

The base resistor R1 is 4.7 kΩ and the emitter-base resistor R2 is 47 kΩ. These values set the input threshold and the off-state leakage — confirm they match your drive circuit before substituting.

Does the RN2106MFV meet AEC-Q101 automotive qualification?

Yes, it is listed under the Automotive, AEC-Q101 series. It is qualified for automotive applications, including under-hood and body electronics where the temperature range and reliability requirements apply.

How can I order the RN2106MFV,L3XHF(CT or request a quote?

The part is active and available in Tape & Reel (TR) or Cut Tape (CT) packaging. Submit an RFQ with your target quantity and delivery timeline. Pricing and stock are confirmed at quote time — no stock-holding claim is made here.