The RN1417,LF: Surface-mount NPN pre-biased transistor in the TO-236-3 / SC-59 / SOT-23-3 footprint, with the supplier device package designated S-Mini. The built-in bias network — 10 kOhms base resistor (R1) and 4.7 kOhms emitter-base resistor (R2) — eliminates two external passives from the board, saving placement cost and PCB area on high-volume designs.
Key ratings and what they mean
Rated 50 V collector-emitter breakdown and 100 mA continuous collector current, with a maximum power dissipation of 200 mW — sized for low-power switching and interface duties like driving relays, LEDs, or logic-level loads from a microcontroller output. Transition frequency of 250 MHz means it handles fast switching up to the low-MHz range, suitable for moderate-speed digital interfaces or signal gating. Vce saturation of 300 mV at 250 µA base and 5 mA collector keeps conduction losses low in saturated switching, so the transistor runs cool in continuous on/off service.
Active production and compliance
Sourced to order against the BOM; current pricing and lead time confirmed at RFQ through independent distribution.