PNP pre-biased transistor in a 1.2 mm footprint
The Infineon BCR 183F E6327 is a PNP pre-biased transistor in a SOT-723 package, integrating two 10 kOhm resistors — one in series with the base, one from base to emitter. This topology cuts the external component count to zero for low-side switching or logic-level interface applications where the load current stays under 100 mA and the collector-emitter voltage never exceeds 50 V. The 200 MHz transition frequency is high enough for most sub-1 MHz switching and signal conditioning roles, though the pre-biased nature limits it to on/off or linear-mode use, not fast PWM.
Infineon lists the BCR 183F E6327 as Obsolete. The part is not in active factory production, so new-stock procurement runs through independent distribution and surplus inventory. The small SOT-723 package and pre-biased topology are common across the BCR 183 family, so a buyer cross-shopping for a pin-compatible drop-in should look at other BCR 183 variants with the same base product number — but each variant's resistor values and package suffix must be verified against the BOM. For a production-run BOM line, this part is a last-time-buy or broker-channel item; qualification of an alternate is recommended for any new design.
Vce(sat) is specified at 300 mV maximum with a base current of 500 µA and collector current of 10 mA. That 300 mV drop at a forced beta of 20 is typical for a pre-biased PNP — the integrated base resistor limits drive current, so the saturation voltage is higher than a discrete transistor driven harder. The DC current gain minimum of 30 at 5 mA, 5 V means the part will switch a 10 mA load with about 330 µA of base drive (through the 10 kOhm R1), but the 100 nA collector cutoff leakage (ICBO) at 25 °C is low enough not to pull up a weak pull-down in off-state.