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Infineon Technologies BCR196TE6327 — Discrete Semiconductors
Infineon Technologies

Infineon BCR196TE6327 PNP Pre-Biased Transistor, 70 mA

MPNBCR196TE6327
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Infineon BCR196TE6327 PNP pre-biased transistor, AEC-Q101, 70 mA collector current, 50 V VCEO, 150 MHz fT, 47 kΩ base resistor, 22 kΩ emitter-base resistor, SOT-23-3 package.

BCR196TE6327 datasheet
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Specifications

BCR196TE6327 Technical Specifications
ParameterValue
SeriesAutomotive, AEC-Q101
Mounting typeSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)70 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce50 @ 5mA, 5V
Power - max200 mW
Frequency150 MHz
PackageBulk
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)47 kOhms
Resistor - emitter base (R2)22 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

AEC-Q101 pre-biased PNP for automotive and industrial switching

The Infineon BCR196TE6327 is a PNP pre-biased transistor in the SOT-23-3 package, qualified to AEC-Q101 for automotive applications. It integrates a 47 kΩ base resistor (R1) and a 22 kΩ emitter-base resistor (R2), reducing external component count on the board. Collector current is rated at 70 mA maximum, with a collector-emitter breakdown voltage of 50 V and a transition frequency of 150 MHz.

The 70 mA collector current ceiling sets the practical limit for driving relays, small solenoids, LED arrays, or logic-level loads. At 10 mA collector current the VCE(sat) is 300 mV typical with 500 µA base drive, keeping conduction losses low. The 100 nA cutoff leakage (ICBO) suits battery-powered or high-impedance nodes where off-state current must be minimal.

Bias resistor ratio and drive margin

With R1 = 47 kΩ and R2 = 22 kΩ, the input current is set by the base resistor; the emitter-base resistor provides a defined off-bias. The 50 minimum DC current gain at 5 mA, 5 V ensures adequate drive for saturated switching. Designers should verify the base drive available from the upstream logic or driver against the 70 mA collector target.

Frequently asked questions

What is the maximum collector current of BCR196TE6327?

The maximum collector current (Ic) is 70 mA.

Is BCR196TE6327 equivalent to any other pre-biased transistor?

Within the same Infineon pre-biased transistor family, pin-compatible parts differ by the integrated resistor values (R1/R2). The BCR196TE6327 uses 47 kΩ / 22 kΩ. A direct cross-reference should match both the resistor ratio and the AEC-Q101 qualification.