Two NPNs with the bias network built in
The ROHM EMG5T2R packs two NPN pre-biased transistors in a single 6-SMD flat-lead EMT5 package, each with a 10 kΩ base resistor and a 47 kΩ emitter-base resistor integrated on-chip. This saves two resistors per channel versus a discrete-transistor layout — a real board-area win on dense mixed-signal or I/O boards where you need a handful of simple switches or level translators. Each transistor handles up to 100 mA collector current and a 50 V collector-emitter breakdown, with a minimum DC current gain of 68 at 5 mA, 5 V. The 250 MHz transition frequency keeps switching clean for general-purpose logic interfacing, relay drivers, or LED switching — not RF, but plenty fast for most control and signal-conditioning tasks. Maximum power dissipation is 150 mW for the whole package, so watch the thermal budget when both channels are loaded. The EMT5 footprint is small — about 1.6 mm × 1.6 mm — which makes it a candidate for handheld or space-constrained designs.
With 150 mW total dissipation in the EMT5 package, running both transistors at 100 mA each with a Vce of 0.3 V saturates the power budget quickly (2 × 100 mA × 0.3 V = 60 mW, leaving 90 mW for switching losses and ambient derating). For continuous duty at higher currents or elevated temperatures, derate or limit one channel to keep junction temperature in check. The 500 nA max collector cutoff is tight enough for battery-powered wake-up circuits.
Sourcing and lifecycle
No last-time-buy or phase-out has been announced.