EMH9T2R

ROHM Semiconductor

ROHM Semiconductor EMH9T2R, dual NPN pre-biased transistor, 50 V VCEO, 100 mA Ic, 250 MHz ft, 10 kΩ base resistor, 47 kΩ base-emitter resistor, SOT-563 / SOT-666 package, EMT6 supplier device package, 150 mW power dissipation, surface mount, ROHS3 compliant.

ROHM Semiconductor EMH9T2R
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

EMH9T2R specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
FET type2 NPN - Pre-Biased (Dual)
Voltage - collector emitter breakdown50V
Current - collector (Ic)100mA
Current - collector cutoff500nA
DC current gain (hFE) (Min) @ ic, vce68 @ 5mA, 5V
Power - max150mW
Frequency - transition250MHz
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOT-563, SOT-666
Resistor - base (R1)10kOhms
Resistor - emitter base (R2)47kOhms
Vce saturation (Max) @ ib, ic300mV @ 250µA, 5mA

Technical details

Dual NPN pre-biased transistor in a compact SOT-563 package

The ROHM Semiconductor EMH9T2R integrates two NPN pre-biased transistors in a single SOT-563 / SOT-666 package, each with a 10 kΩ base resistor (R1) and a 47 kΩ base-emitter resistor (R2). The 150 mW power dissipation limit per package sets the thermal budget for both channels combined.

Sizing the load: 50 V and 100 mA limits

The 300 mV saturation voltage at 250 µA base drive and 5 mA collector current gives a low on-state drop for logic-level loads.

Package and footprint for dense layouts

The SOT-563 / SOT-666 package (EMT6 supplier device package) is an ultra-small, 6-lead surface-mount package. The 0.5 mm lead pitch and compact body suit space-constrained designs such as portable electronics, sensor modules, and multi-channel I/O blocks.

EMH9T2R
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