Toshiba RN2115MFV,L3F PNP pre-biased transistor, 50 V collector-emitter breakdown, 100 mA continuous collector current, SOT-723 surface-mount package, built-in bias resistors R1=2.2 kΩ and R2=10 kΩ.
| Parameter / Attribute | Specification / Value |
|---|---|
| Mounting | Surface Mount |
| FET type | PNP - Pre-Biased |
| Voltage - collector emitter breakdown | 50 V |
| Current - collector (Ic) | 100 mA |
| Current - collector cutoff | 500nA |
| DC current gain (hFE) (Min) @ ic, vce | 50 @ 10mA, 5V |
| Power - max | 150 mW |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Case | SOT-723 |
| Resistor - base (R1) | 2.2 kOhms |
| Resistor - emitter base (R2) | 10 kOhms |
| Vce saturation (Max) @ ib, ic | 300mV @ 500µA, 5mA |
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The built-in base resistor R1 of 2.2 kΩ and base-emitter resistor R2 of 10 kΩ eliminate two external components, shrinking the BOM count and board area.
Housed in the SOT-723 (VESM) package, the device dissipates up to 150 mW.
R1 (base resistor) is 2.2 kΩ and R2 (base-emitter resistor) is 10 kΩ. These values set the base drive current and ensure a defined off-state without external components.