The Infineon BCR116WE6327BTSA1 is an NPN pre-biased digital transistor in a SC-70 / SOT-323 package, integrating a 4.7 kΩ series base resistor (R1) and a 47 kΩ resistor (R2) between base and emitter. This built-in bias network eliminates two external resistors per channel, saving board area in high-density designs like relay drivers, logic-level translators, and low-current load switches. With a collector-emitter breakdown of 50 V and a continuous collector current rating of 100 mA, it handles typical 5 V and 12 V logic interfaces comfortably. The transition frequency of 150 MHz is adequate for switching up to several megahertz.
This part carries an Obsolete lifecycle status per the manufacturer. There is no official successor listed in the record, so any replacement will require a pin-compatible or functionally equivalent pre-biased NPN in the same SOT-323 footprint. Date-code provenance and condition should be confirmed at quote time, especially for stock surfacing well after the last-time-buy window.
The built-in 4.7 kΩ base resistor sets the base current for a given drive voltage — at 3.3 V logic, base current is roughly (3.3 V – 0.7 V) / 4.7 kΩ ≈ 550 µA, which with a minimum DC current gain of 70 at 5 mA collector current gives plenty of drive headroom for switching a 10 mA load. The 47 kΩ emitter-base resistor ensures the transistor is held off when the base drive is open or high-impedance, which is useful in mixed-voltage or power-sequencing applications. Vce(sat) of 300 mV max at 10 mA collector current keeps conduction losses low in saturated switching. The 250 mW power dissipation limit in the SOT-323 package means derating is needed above about 85 °C ambient if running near the full 100 mA.