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Infineon Technologies BCR185E6327 — Discrete Semiconductors

BCR185E6327 PNP Pre-Biased Transistor, 200 mW, SOT-23-3

MPNBCR185E6327
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Infineon BCR185E6327 PNP pre-biased transistor, AEC-Q101 qualified, 200 mW, SOT-23-3 surface mount package, 50 V VCEO, 100 mA IC, 200 MHz fT.

$1.0000Ref. price · indicative, final on quote
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MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
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Specifications

BCR185E6327 Technical Specifications
ParameterValue
SeriesAutomotive, AEC-Q101
Mounting typeSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce70 @ 5mA, 5V
Power - max200 mW
Frequency200 MHz
PackageBulk
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)10 kOhms
Resistor - emitter base (R2)47 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

PNP pre-biased transistor with integrated resistors

The Infineon BCR185E6327 is a PNP pre-biased transistor — a digital transistor that integrates the bias resistors directly into the package. This is a SOT-23-3 surface-mount device rated for 200 mW power dissipation and 100 mA collector current, with a 50 V collector-emitter breakdown voltage and a 200 MHz transition frequency. The internal resistor network consists of a 10 kΩ base resistor (R1) and a 47 kΩ emitter-base resistor (R2), which eliminates the need for external biasing components and simplifies PCB layout. The part carries AEC-Q101 automotive qualification, making it suitable for under-hood and chassis-domain electronics where temperature cycling and vibration are a concern.

R1 and R2 values — no external biasing needed

The BCR185E6327 integrates a 10 kΩ base resistor (R1) and a 47 kΩ emitter-base resistor (R2). These values set the turn-on threshold and base current limit, so the transistor switches on when the input voltage exceeds roughly 2.5 V at the base pin. For a 5 V logic drive, the base current is limited to about 250 µA, which is well within the 100 mA collector current rating. The 47 kΩ resistor across the base-emitter junction also provides a guaranteed off-state with the input pulled low, reducing leakage to the 100 nA ICBO maximum.

AEC-Q101 — qualified for automotive and industrial environments

The BCR185E6327 is listed with an Automotive, AEC-Q101 qualification. For a buyer sourcing for an ECU, sensor module, or motor drive, this qualification eliminates the need for additional screening.

SOT-23-3 package — rework and layout notes

The BCR185E6327 comes in a PG-SOT23-3-1 package (SOT-23-3 footprint). The small thermal mass means it reflows cleanly with standard lead-free profiles; a hot-air station at 300 °C for a few seconds lifts the part without damaging the board pad. The package has no exposed pad, so the 200 mW power limit is the junction-to-ambient ceiling — keep the copper pour on the collector trace generous if running near the limit.

Frequently asked questions

What are the resistor values (R1 and R2) of BCR185E6327?

The base resistor (R1) is 10 kΩ and the emitter-base resistor (R2) is 47 kΩ. These are integrated into the transistor package, so no external biasing resistors are needed.

Is BCR185E6327 automotive qualified (AEC-Q101)?

Yes, the BCR185E6327 carries an Automotive, AEC-Q101 qualification, making it suitable for automotive and other high-reliability applications.