Integrated bias resistors save a resistor pair per switching node
The BCR 192T E6327 is a PNP pre-biased transistor from Infineon that integrates the bias network directly into the silicon: a 22 kΩ series base resistor (R1) and a 47 kΩ resistor (R2) between base and emitter. This eliminates two discrete resistors per transistor from the BOM and shrinks the footprint to a single SC-75 (SOT-416) surface-mount package. With a collector current rating of 100 mA and a collector-emitter breakdown voltage of 50 V, it handles the typical switching loads in low-power DC-DC converters, relay drivers, and logic-level interface circuits. The 200 MHz transition frequency confirms it is fast enough for PWM frequencies well into the hundreds of kilohertz. Maximum power dissipation is 250 mW — a realistic ceiling in the small SC-75 package. For continuous operation near that limit, pay attention to PCB copper area and ambient temperature; the junction-to-ambient thermal resistance of this package is modest, so a 100 mA load at a Vce of 2.5 V already consumes the full 250 mW budget.
Switching performance at 5 mA bias point
Minimum DC current gain is 70 at 5 mA collector current and 5 V Vce — a gain high enough that a 100 µA base drive from a logic output saturates the transistor comfortably. Collector cutoff current is 100 nA maximum — negligible in most designs, but worth noting if the load is a high-impedance input that could be pulled by microamp leakage at elevated temperature.
This part is still in regular production and available through Infineon's distribution network, which means no date-code scrambling or premium pricing for a discontinued line.