Integrated bias resistors save a resistor pair per switching node
The BCR 192T E6327 is a PNP pre-biased transistor from Infineon that integrates the bias network directly into the silicon: a 22 kΩ series base resistor (R1) and a 47 kΩ resistor (R2) between base and emitter. This eliminates two discrete resistors per transistor from the BOM and shrinks the footprint to a single SC-75 (SOT-416) surface-mount package. With a collector current rating of 100 mA and a collector-emitter breakdown voltage of 50 V, it handles the typical switching loads in low-power DC-DC converters, relay drivers, and logic-level interface circuits. The 200 MHz transition frequency confirms it is fast enough for PWM frequencies well into the hundreds of kilohertz. Maximum power dissipation is 250 mW — a realistic ceiling in the small SC-75 package. For continuous operation near that limit, pay attention to PCB copper area and ambient temperature; the junction-to-ambient thermal resistance of this package is modest, so a 100 mA load at a Vce of 2.5 V already consumes the full 250 mW budget.
Switching performance at 5 mA bias point
Minimum DC current gain is 70 at 5 mA collector current and 5 V Vce — a gain high enough that a 100 µA base drive from a logic output saturates the transistor comfortably. The Vce saturation voltage is 300 mV maximum at 500 µA base current and 10 mA collector current, which keeps conduction losses low in saturated switching. Collector cutoff current is 100 nA maximum — negligible in most designs, but worth noting if the load is a high-impedance input that could be pulled by microamp leakage at elevated temperature.
This part is still in regular production and available through Infineon's distribution network, which means no date-code scrambling or premium pricing for a discontinued line.