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Infineon Technologies BCR198WH6327XTSA1 — Discrete Semiconductors

BCR198WH6327XTSA1 Infineon PNP Pre-Biased Transistor, 50 V

MPNBCR198WH6327XTSA1
NRND

Infineon BCR198WH6327XTSA1 PNP pre-biased transistor, 50 V VCEO, 100 mA IC, 190 MHz fT, 250 mW, SC-70/SOT-323 package.

$1.0000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BCR198WH6327XTSA1 specifications
ParameterValue
MountingSurface Mount
FET typePNP - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce70 @ 5mA, 5V
Power - max250 mW
Frequency - transition190 MHz
PackageTape & Reel (TR)
CaseSC-70, SOT-323
Resistor - base (R1)47 kOhms
Resistor - emitter base (R2)47 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

PNP pre-biased transistor in SC-70 — 47 kΩ base and emitter resistors

The Infineon BCR198WH6327XTSA1 is a PNP pre-biased transistor in a surface-mount SC-70 (SOT-323) package, integrating two 47 kΩ resistors — one in series with the base (R1) and one between base and emitter (R2). This built-in bias network eliminates two external passives from the BOM, shrinking the footprint for digital switching loads up to 100 mA collector current.

NRND — lifecycle and sourcing for BCR198WH6327XTSA1

This means Infineon is phasing out the part; new designs should not use it, and existing production runs will eventually need a transition.

190 MHz fT and 300 mV saturation — switching performance

Frequently asked questions

What are the resistor values in BCR198WH6327XTSA1?

Both the base resistor (R1) and the base-emitter resistor (R2) are 47 kΩ.

Can I use BCR198WH6327XTSA1 in a new design?

Infineon has marked this part NRND, so it is not recommended for new designs. Look for a pin-compatible pre-biased PNP transistor in the same SC-70 package from Infineon or other manufacturers for ongoing production.