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IC CLOCK MULTIPLIER ATTENUATOR

SINGLE PIN DIODE FOR ATTENUATOR

IC CLOCK MULTIPLIER ATTENUATOR

Microchip Technology ZL30256LFG7 jitter attenuator, PLL-based, 1.045 GHz max, 10:18 I/O, 3 circuits, CMOS/HCSL/HSTL/LVDS/LVPECL outputs, 80-LGA (11x11 mm), tray.

DIODE FOR FREQUENCY ATTENUATOR

DIODE FOR FREQUENCY ATTENUATOR

Analog Devices HMC7044LP10BETR jitter attenuator, PLL Yes, Type Jitter Attenuator, Input CML/CMOS/LVDS/LVPECL, Output CML/LVDS/LVPECL, Frequency - Max 3.2GHz, 68-VFQFN Exposed Pad CSP, -40°C to 85°C.

Analog Devices HMC7044LP10BE jitter attenuator, PLL Yes, 3.2 GHz max, 4:14 input:output, CML/CMOS/LVDS/LVPECL I/O, 68-LFCSP-VQ (10x10), -40 to 85°C, surface mount.

IC JITTER ATTENUATOR/MULTIPLEXER

Renesas Electronics FemtoClock® NG clock synthesizer and jitter attenuator, 8V19N492NLGI, PLL, 2:16 LVCMOS/LVDS/LVPECL I/O, 2.949 GHz max, 88-VFQFPN (10x10 mm), -40 to 105°C.

Renesas FemtoClock® NG series, 8T49N240-998NLGI, PLL-based jitter attenuator, 2:4 fanout, 867 MHz max, LVCMOS/LVDS/LVHSTL/LVPECL/Crystal input, HCSL/LVCMOS/LVDS/LVPECL output, 1.71V–3.465V supply, -40 to 85°C, 40-VFQFPN (6x6).

Renesas FemtoClock® series, 8V19N882NVGI Clock Generator, Jitter Attenuator, PLL Yes, 2:17 Input:Output, LVCMOS/LVDS/LVPECL input, LVDS/LVPECL output, 6GHz max frequency, 76-VFQFN Exposed Pad, -40°C ~ 95°C.

Texas Instruments LMK5C33216RGCR, Clock Generator / Synchronizer / Jitter Attenuator, single PLL, 3:16 input:output ratio, 3 GHz max output, 3.135V–3.465V supply, -40°C to 85°C, 64-VFQFN exposed pad.

Texas Instruments LMK5C33216RGCT clock generator, clock synchronizer, jitter attenuator, PLL, 2:16 input:output, 3 GHz max, 64-VFQFN exposed pad, tape and reel.

NXP BAP64-05W,115, RF PIN diode, 1 pair common cathode, 100 V peak reverse, 100 mA max, 0.35 pF @ 20 V, 1.35 Ω @ 100 mA, SC-70 (SOT-323) package, -65 to 150 °C junction, 240 mW, ROHS3, Active.

Infineon BAR6303WE6327HTSA1 RF PIN Diode, Single, 50V Peak Reverse, 100 mA Max Current, 1 Ohm @ 10 mA / 100 MHz, 0.3 pF @ 5V / 1 MHz, 250 mW, SOD-323 Package, Active.

Infineon BAR66E6327HTSA1 PIN diode, 1 pair series connection, 150V peak reverse, 200 mA max, 1.8Ω @ 5mA/100MHz, 0.6pF @ 35V/1MHz, 250 mW, SOT-23-3 package, active.

HVM14SRTL-E PIN diode, 50V, Bulk package, Active lifecycle, ROHS3 Compliant.

Microchip Technology GIGAMITE® series PIN diode, single, 250V peak reverse, 800mOhm @ 20mA, 0.6pF, 0805 (2012 Metric) package, Tape & Reel.

Analog Devices DS1841N+ digital potentiometer, 22kOhm, 128 taps, logarithmic taper, I²C interface, non-volatile memory, 10-TDFN exposed pad package, surface mount.

Infineon BAR6702VH6327XTSA1 single PIN diode, 150 V peak reverse, 200 mA max, 0.55 pF capacitance @ 5 V, 1 Ohm resistance @ 10 mA / 100 MHz, 250 mW, SC-79 / SOD-523 package, PG-SC79-2.

Infineon BAR6402ELE6327XTMA1 PIN - Single RF diode, 150 V peak reverse, 250 mW dissipation, 1.35 Ω @ 100 mA / 100 MHz, 0.35 pF @ 20 V / 1 MHz, 0402 (1006 Metric) case, PG-TSLP-2-19 package.

Infineon BAR9002ELSE6327XTSA1, PIN - Single diode, 100 mA max, 80 V peak reverse, 250 mW, 800 mOhm @ 10 mA/100 MHz, 0.35 pF @ 1 V/1 MHz, 0201 (0603 Metric) package, PG-TSSLP-2-3, 150°C junction temp, ROHS3, Active.

Nexperia BAP64-04W,115 PIN diode, 1 Pair Series Connection, 100V peak reverse, 100 mA max, 1.35 Ohm @ 100mA/100MHz, 0.35pF @ 20V/1MHz, SC-70 (SOT-323) package, -65°C to 150°C, 240 mW.

Infineon BAT18 series PIN diode, 1 pair common cathode, 35 V peak reverse, 100 mA max, 700 mOhm at 5 mA / 200 MHz, 1 pF at 20 V / 1 MHz, SOT-23 package, active lifecycle.

Infineon BAR81WE6327 PIN Diode, Standard - Single, 100 mA max current, 30 V peak reverse voltage, 1 Ohm @ 5 mA 100 MHz, 0.9 pF @ 3 V 1 MHz, SC-82A SOT-343 package, PG-SOT343-4, 150°C junction temperature, 100 mW power dissipation, Bulk.

NXP BAP64-02,115 single PIN diode, 175V peak reverse, 100 mA max, 1.35 ohm at 100mA/100MHz, 0.35 pF at 20V/1MHz, 715 mW, SOD-523, -65 to 150°C.

Infineon BAR6406E6327HTSA1 RF PIN diode, 1 Pair Common Anode, 150V peak reverse, 100 mA max, 1.35 Ohm @ 100 mA, 0.35 pF, SOT-23-3 package.

Texas Instruments LMP7312MA/NOPB, Programmable Amplifier/Attenuator, 14-SOIC (0.154", 3.90mm Width), Surface Mount, Supply Current 2 mA, -40°C to 125°C, Active, ROHS3.

Renesas 553SCMGI Fanout Buffer (Distribution), 1:4 ratio, single-ended clock input/output, 200 MHz max, 1.71 V to 3.465 V supply, -40°C to 105°C, 8-UFDFN (2x2 mm) package, surface mount.

Analog Devices MAX4514CUK+T SPST-NO analog switch, 20 Ohm on-resistance, 150 ns / 100 ns switching, SOT-23-5 package, Tape & Reel.

Maxim Integrated MAX5410EEE+ dual 10kΩ digital potentiometer, 32 taps, logarithmic taper, SPI interface, mute and zero-cross sense, -40°C to +85°C, 16-QSOP surface mount package, RoHS3 compliant.

Analog Devices MAX5392NAUE+ digital potentiometer, 100kΩ, 256 taps, dual-channel, I²C interface, linear taper, 16-TSSOP package, -40°C to 125°C.

Infineon BAR6304E6327HTSA1 RF PIN diode, 1 pair series connection, 50V peak reverse, 100 mA max, 1 Ohm @ 10 mA / 100 MHz, 0.3 pF @ 5 V / 1 MHz, 250 mW, SOT-23-3 package, PG-SOT23, active, ROHS3.

Infineon BAR6302LE6327XTMA1 PIN - Single RF diode, 50V peak reverse, 100 mA max, 0.3pF @ 5V, 1 Ohm @ 10mA/100MHz, 250 mW, SOD-882 / PG-TSLP-2-1 package, 150°C junction, ROHS3 compliant.

Infineon BAT18 series PIN diode array, BAT1804E6327HTSA1, 1 pair series connection, 35V peak reverse, 100mA max, 1pF @ 20V, SOT-23-3 package.

Infineon BAR6402VH6327XTSA1 single PIN diode, 150V peak reverse voltage, 100 mA max current, 0.35pF @ 20V, 1.35 ohm @ 100mA, SC-79/SOD-523 package, 150°C junction temperature, 250 mW dissipation.

Infineon BAR6305WH6327XTSA1 RF PIN diode, 1 pair common cathode, 50V peak reverse, 100 mA, 250 mW, PG-SOT23 package.

NXP BA891,115 standard PIN diode, 35 V peak reverse, 100 mA max current, 500 mOhm @ 10 mA / 100 MHz, 0.9 pF @ 3 V / 1 MHz, SOD-523 package, -65 to 150 °C junction temp.

NXP BAP64LX,315 single PIN diode, 60V peak reverse voltage, 100 mA max current, 1.5 Ohm resistance at 100mA/100MHz, 0.3pF capacitance at 20V/1MHz, 150 mW dissipation, SOD-882 package, -65°C to 150°C junction temperature.

* HVM189STL-E, PIN diode, series *, Bulk package, ROHS3 Compliant, Active lifecycle.

Analog Devices LTC7541AKN#PBF, 12-bit multiplying DAC, R-2R architecture, current output unbuffered, 600ns settling, parallel interface, ±0.5 LSB INL/DNL, 18-DIP through-hole, 0°C to 70°C.

NXP BAP55LX,315 PIN diode, single, 50V peak reverse, 100mA max current, 800mOhm at 100mA/100MHz, 0.28pF at 20V/1MHz, 135mW dissipation, 2-XDFN package (DFN1006D-2), -65°C to 150°C junction temp.

MMP4400 series, PIN - Single diode, 500V peak reverse, 300mOhm @ 100mA/100MHz, 1pF @ 50V/1MHz, 5W max dissipation, -55°C to 150°C, 0805 SMT, ROHS3, Active.

HVC132TRF-E PIN diode, 60V, Series *, Package Bulk, lifecycle_stage current, ROHS3 Compliant.

HVM14TR-E PIN diode, 50 V reverse voltage, ROHS3 compliant, Bulk package, active lifecycle.

Infineon BAR6305E6327HTSA1 RF PIN diode, 1 pair common cathode, 100 mA max, 50V peak reverse, 1 Ohm @ 10mA/100MHz, 0.3pF @ 5V/1MHz, 250 mW, PG-SOT23 package, ROHS3 compliant.

Infineon BAT18-05E6327 PIN diode, 35V peak reverse, 100 mA max current, 1pF capacitance at 20V, 700mOhm at 5mA, 200MHz, common cathode pair, SOT-23 package, active.

Microchip Technology LXP1002-23-2 PIN diode, 1 pair series connection, 50V peak reverse, 100 mA max, 4 Ohm @ 100 mA 100 MHz, 0.32 pF @ 50V 1 MHz, SOT-23-3 package, Bag.

Microchip Technology MMP4400 series PIN diode, single, 0805 (2012 Metric) package, Tape & Reel (TR), 500 V peak reverse, 0.5 pF capacitance, 650 mOhm resistance.

GMP4212-GM1, GIGAMITE® series, single PIN diode, 1.5 Ohm @ 20 mA / 100 MHz, 0.25 pF @ 10 V / 1 MHz, 100 V peak reverse, -55 to 125 °C, 0805 (2012 Metric) package, Bag.

Microsemi MPP4205-206/TR, PIN Diode - Single, 70V Peak Reverse, 5 Ohm @ 10mA/100MHz, 0.15pF @ 10V/1MHz, 0402 (1005 Metric) case, -55°C to 150°C, Tape & Reel.

Infineon BAR6503WE6327HTSA1 PIN - Single RF diode, 100 mA max current, 30 V peak reverse voltage, 900 mOhm @ 10 mA/100 MHz, 0.8 pF @ 3 V/1 MHz, 250 mW dissipation, SOD-323 package, 150°C junction temperature, RoHS3 compliant.

MMP4400 series single PIN diode, 1000 V peak reverse, 0.6 pF @ 50 V, 750 mOhm @ 100 mA, 100 MHz, 8 W dissipation, -55 to 150 °C, 0805 package, ROHS3 compliant.

Infineon BAR6502VH6327XTSA1, single PIN diode, 30 V peak reverse, 100 mA max current, 900 mOhm at 10 mA, 100 MHz, 0.8 pF at 3 V, 1 MHz, 250 mW dissipation, SC-79 / SOD-523 package, active lifecycle.

Texas Instruments DAC0808LCM/NOPB 8-bit multiplying DAC, current-unbuffered output, 150ns settling time, parallel interface, 16-SOIC package, tube.

HVM187STR-E PIN diode, 60V, series *, Bulk package, ROHS3 Compliant, Active lifecycle.

NXP BAP70AM135 PIN diode, 50 V reverse voltage, 100 mA forward current, 6-pin TSSOP package, Bulk.

Analog Devices DS21352LBN T1 single-chip transceiver, 3.3 V, Bulk package, Discrete Semiconductors.

Texas Instruments PLLatinum™ jitter cleaner, PLL Yes, Type Jitter Cleaner, Input LVCMOS/LVDS/LVPECL, Output LVCMOS/LVDS/LVPECL, 1.536 GHz max, 2:14 I/O ratio, 64-WFQFN exposed pad, -40°C to 85°C.