RF switch and attenuator core — 1pF capacitance at 20V
The Infineon BAT18-05E6327 is a silicon PIN diode configured as a common cathode pair in a SOT-23 package. Its 1pF capacitance at 20V reverse bias and 700mOhm series resistance at 5mA forward current (measured at 200MHz) make it a fit for RF switching and attenuator circuits up to several gigahertz, where low insertion loss and high isolation are the design targets.
35V peak reverse — voltage headroom for RF front ends
Rated for 35V peak reverse voltage, this diode handles the voltage swings typical in 50-ohm RF paths without breakdown. The 100 mA maximum forward current supports the bias levels needed to modulate the resistance from a few ohms (high forward bias) to the 700mOhm floor at 5mA.
Active lifecycle — no LTB concern
Listed as Active in production. The SOT-23 package is a standard footprint with broad second-source availability across the PIN diode family, though no official cross-reference is cited here.