RF switch and attenuator core — 0.55 pF at 5 V
The Infineon BAR6702VH6327XTSA1 is a single PIN diode designed for RF switching and attenuator circuits up into the UHF and low-microwave bands. Its capacitance of 0.55 pF at 5 V reverse bias keeps the off-state isolation high without loading the signal path, while the series resistance of 1 Ohm at 10 mA forward current and 100 MHz gives a low insertion loss when biased on. Rated for a peak reverse voltage of 150 V and a maximum forward current of 200 mA, this diode handles the RF power levels typical of base station T/R switches, antenna diversity circuits, and variable attenuators without breaking down.
Thermal budget in a compact package
The 250 mW power dissipation limit and 150 °C junction temperature rating set the thermal ceiling for continuous RF power. In the PG-SC79-2 (SOD-523) package, the small body means the PCB copper area under the diode is the primary heat path — a tight layout with minimal ground-plane connection will raise the junction temperature faster than the 250 mW number suggests.