RF PIN diode in a 0201 footprint
The Infineon BAR9002ELSE6327XTSA1 is a single PIN diode in the ultra-compact 0201 (0603 Metric) case, supplier package PG-TSSLP-2-3. Rated for 80 V peak reverse voltage and 250 mW power dissipation, it handles 100 mA max forward current. The key RF specs are 800 mOhm series resistance at 10 mA, 100 MHz and 0.35 pF capacitance at 1 V, 1 MHz — numbers that drive the insertion loss and isolation in a switch or attenuator path. Junction temperature rating goes to 150°C, so it can sit near a PA or other hot RF stage without derating headaches.
What the ratings mean for RF front-end design
800 mOhm at 10 mA bias and 100 MHz is the on-state resistance. The 0.35 pF capacitance at 1 V reverse bias sets the off-state isolation.
Package and mounting
The 0201 case fits into dense RF front-end modules or multi-layer ceramic modules where board space is tight. The PG-TSSLP-2-3 is a leadless plastic package with two terminals, compatible with standard SMT reflow.
Sourcing and lifecycle
Infineon lists the BAR9002ELSE6327XTSA1 as Active and ROHS3 compliant. No NRND or EOL flags — it's a current-production part with no last-time-buy risk.