RF PIN diode for switch and attenuator stages
The Infineon BAR6402ELE6327XTMA1 is a single PIN diode in a 0402 (1006 Metric) case, housed in the PG-TSLP-2-19 package. It handles a peak reverse voltage of 150 V and dissipates up to 250 mW, making it suitable for RF switching and attenuator circuits in base stations, antenna tuning, and test equipment. The junction temperature rating of 150 °C supports operation in thermally constrained RF front-end designs.
Key RF specs — insertion loss and isolation
Series resistance is 1.35 Ω at 100 mA forward current and 100 MHz, which sets the insertion loss floor in the on-state. Capacitance measures 0.35 pF at 20 V reverse bias and 1 MHz — low enough to maintain isolation into the low-GHz range. These two numbers together define the trade-off: forward current drives the resistance down, reverse voltage keeps the capacitance low.
Active lifecycle — no obsolescence risk
The BAR6402ELE6327XTMA1 has an active lifecycle status and is ROHS3 compliant. No last-time-buy or end-of-life notices are on record.