BAR6305WH6327XTSA1

Infineon Technologies

Infineon BAR6305WH6327XTSA1 RF PIN diode, 1 pair common cathode, 50V peak reverse, 100 mA, 250 mW, PG-SOT23 package.

Infineon Technologies BAR6305WH6327XTSA1
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[IN STOCK] In Stock: 2 pcs
$1.28/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

BAR6305WH6327XTSA1 specifications
Parameter / AttributeSpecification / Value
Diode typePIN - 1 Pair Common Cathode
Voltage - peak reverse50V
Current - max100 mA
Power dissipation250 mW
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
CaseTO-236-3, SC-59, SOT-23-3
Resistance @ if,1Ohm @ 10mA, 100MHz
Capacitance @ vr,0.3pF @ 5V, 1MHz

Technical details

The Infineon BAR6305WH6327XTSA1 is a silicon PIN diode configured as a 1 pair common cathode in a PG-SOT23 package. It handles a peak reverse voltage of 50 V and a maximum continuous current of 100 mA, with a power dissipation limit of 250 mW. The common-cathode layout pairs two diodes in a single SOT-23-3 footprint, saving board space in RF switch, attenuator, and limiter circuits where the cathodes share a common bias or RF return. This part is rated for a junction temperature up to 150 °C, which covers the thermal environment of compact RF front-end modules and base-station transceiver boards.

Series resistance and capacitance — what they mean for RF performance

Series resistance is 1 ohm at 10 mA and 100 MHz. Off-state capacitance is 0.3 pF at 5 V and 1 MHz.

No end-of-life or last-time-buy notices are in effect.

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