RF PIN diode in a common-cathode pair
The Infineon BAR6305E6327HTSA1 is a silicon PIN diode configured as a single common-cathode pair in a SOT-23-3 package. It handles a peak reverse voltage of 50 V and a forward current up to 100 mA, with a power dissipation ceiling of 250 mW. The junction is rated for 150 °C, so it handles reflow without drama — check the MSL before you place it, but the standard SOT-23 footprint keeps tombstoning risk low.
RF performance numbers that matter
Two specs define this part for RF switching and attenuator circuits. Series resistance is 1 ohm at 10 mA and 100 MHz — low enough to keep insertion loss under control in the forward-biased state. Capacitance at 5 V reverse bias and 1 MHz is 0.3 pF, which means isolation stays high through low-GHz bands. Together they give the designer a clean trade-off between on-state loss and off-state isolation.
Lifecycle and sourcing
Infineon lists the BAR6305E6327HTSA1 as Active with ROHS3 compliance. No end-of-life notice or last-time-buy window to track. For current pricing and availability, submit an RFQ — we source through independent distribution and confirm both at quote time.