RF switch core — PIN diode in SOD-323
The Infineon BAR6503WE6327HTSA1 is a single PIN diode designed for RF switching and attenuator applications. It handles up to 100 mA forward current and blocks 30 V peak reverse. On-resistance sits at 900 mOhm when biased at 10 mA at 100 MHz, with a junction capacitance of 0.8 pF at 3 V reverse bias and 1 MHz — numbers that define insertion loss and isolation in the signal path. The SOD-323 package (PG-SOD323-2) keeps the footprint small for dense RF front-end boards. Junction temperature is rated to 150°C, and total power dissipation maxes at 250 mW.
What the ratings mean for the RF path
The 900 mOhm resistance at 10 mA forward bias sets the series loss when the diode is on — lower resistance means less signal attenuation through the switch. The 0.8 pF capacitance at 3 V reverse bias determines how well the diode isolates the RF port when it's off; lower capacitance improves isolation at higher frequencies. Together they define the on/off ratio the designer can expect in a shunt or series configuration. The 100 mA current rating is the DC bias limit, not the RF envelope — the diode is meant to be DC-biased through an inductor or bias tee, not driven directly by the RF carrier.
Lifecycle and compliance
Infineon lists the BAR6503WE6327HTSA1 as Active. RoHS3 compliant. The part is available through independent distribution; we source and quote it to order against an RFQ.