PIN diode pair for RF switching and attenuation
The Infineon BAR6406E6327HTSA1 is a silicon PIN diode configured as a 1-pair common anode, designed for RF switching, attenuator, and limiter circuits from VHF through low microwave bands. It handles a peak reverse voltage of 150V and a forward current up to 100 mA, suiting it for medium-power RF front-end and antenna-switching applications. Series resistance is 1.35 Ohm typical at 100 mA and 100 MHz, keeping insertion loss low in the on-state.
Capacitance and isolation at UHF
With a capacitance of 0.35 pF at 20V reverse bias and 1 MHz, the BAR6406E6327HTSA1 delivers high off-state isolation at frequencies up to several gigahertz. The low capacitance also minimises signal bleed-through in shunt-configured switch stages.
SOT-23 package and power handling
Housed in a standard SOT-23-3 (PG-SOT23) surface-mount package, the part dissipates up to 250 mW and operates with a junction temperature rating of 150°C. The small footprint suits dense RF layouts, but the 250 mW dissipation limit means the designer should check thermal resistance in high-current or high-duty-cycle switch branches.