RF switch core — PIN diode in a tiny SC-79
The Infineon BAR6402VH6327XTSA1 is a single PIN diode designed for RF switching and attenuator applications. Its 150 V peak reverse voltage rating suits it for transmit/receive switching in base stations and radar front-ends where high-voltage RF envelopes are present. The 0.35 pF capacitance at 20 V reverse bias keeps off-state isolation high through UHF and low microwave bands, while the 1.35 ohm series resistance at 100 mA forward current minimizes insertion loss in the on-state. Maximum forward current is 100 mA; power dissipation is rated at 250 mW. The junction temperature rating of 150°C covers hot environments near power amplifiers.
Package and mounting
Housed in the SC-79 / SOD-523 case (supplier device package PG-SC79-2), this diode occupies minimal board area. The small footprint suits dense RF front-end modules where every square millimetre counts. Reflow soldering profile follows standard lead-free assembly; the part is ROHS3 compliant.
Lifecycle and sourcing
The BAR6402VH6327XTSA1 carries an Active product status from Infineon. ROHS3 compliance is declared.