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Texas Instruments BQ2057 series, Battery Charger IC, Lithium Ion/Polymer, 1 cells, 4.2V, -20°C ~ 70°C TA, 8-TSSOP, Tape & Reel.

NXP BAP70AM/A115 PIN diode, series *, active lifecycle, bulk packaging.

Analog Devices MAX8863TEUK+T, linear voltage regulator, positive output, adjustable (1.25 V to 6.5 V) or fixed 3.15 V, 120 mA, 0.12 V dropout at 50 mA, 62 dB PSRR at 300 Hz, SOT-23-5, -40°C to 85°C.

Texas Instruments LM4040C50IDBZT, shunt voltage reference, fixed 5 V output, ±0.5% tolerance, 15 mA output, 95 µA cathode current, 80 µVrms noise, -40°C to 85°C, SOT-23-3 package.

Texas Instruments SIMPLE SWITCHER® LM2596S-ADJ/NOPB, step-down (buck) regulator, adjustable output, 3 A, 150 kHz, 4.5 V to 40 V input, TO-263-5, -40°C to 125°C.

Texas Instruments LinCMOS™ TL052CP dual J-FET operational amplifier, 3 MHz gain bandwidth, 20.7 V/µs slew rate, 30 pA input bias current, 8-DIP through-hole package, tube.

Analog Devices ADM1178-2ARMZ-R7 Hot Swap Controller, Monitor, single channel, 3.15V to 16.5V supply, I²C interface, latched fault, UVLO, -40°C to 85°C, 10-MSOP package.

DAC811KU-1/1K, single 12-bit R-2R DAC, Bulk package, active production.

Maxim Integrated MAX9634TEUK+T nanoPower Current Sense Amplifier, single circuit, 125 kHz gain-bandwidth, 100 µV input offset, 1.1 µA supply, SC-74A/SOT-753 package, -40°C to 85°C.

Analog Devices MAX6126 series precision voltage reference, MAX6126BASA21+, fixed 2.048V output, ±0.06% initial accuracy, 10ppm/°C temperature coefficient, 1.3µVp-p noise, 8-SOIC package, tube.

Maxim Integrated MAX9039BEBT+T, single comparator with integrated voltage reference, ±3mV hysteresis, 450ns propagation delay, 2.5V to 5.5V supply, CMOS/TTL outputs, 6-WLP package, -40°C to 85°C.

Maxim Integrated MAX6375XR31+ Voltage Detector, 3.08V threshold, Active Low reset, Push-Pull output, SC-70-3, -40°C to 85°C.

Texas Instruments LM4040AIM3-10.0/NOPB precision shunt voltage reference, fixed 10 V output, ±0.1% initial tolerance, 100 ppm/°C temperature coefficient, 15 mA output current, SOT-23-3 package, -40°C to 85°C operating range.

Infineon BCR 162T E6327 PNP pre-biased transistor, SC-75 SOT-416 package, 4.7 kOhm base and emitter-base resistors, 200 MHz transition frequency, 100 mA collector current, 50 V Vce, 250 mW power dissipation.

Texas Instruments LM2903PSRG4, dual differential comparator, 2V to 36V supply, open-drain/CMOS/MOS/TTL output, -40°C to 125°C, 8-SOIC package, surface mount, active product status.

onsemi H11N1SR2VM, single-channel optoisolator, 4170 Vrms isolation, 5 MHz data rate, open-collector output, 6-SMD Gull Wing, -40°C to 85°C, Tape & Reel

Texas Instruments 74HC series, XNOR (Exclusive NOR) gate, SN74HC266DR, 4 circuits, 2 inputs, open drain outputs, 14-SOIC package, Tape & Reel.

Texas Instruments LM335AH/NOPB analog temperature sensor, 10mV/°K resolution, TO-206AB TO-46-3 metal can, through-hole, Bulk package, -40°C to 100°C range.

Texas Instruments LT1009ILP precision shunt voltage reference, 2.5V fixed output, ±0.2% tolerance, 35ppm/°C temperature coefficient, 10 mA output, TO-92-3 through-hole package, ROHS3 compliant.

Infineon BCR 148S H6827, dual NPN pre-biased transistor, 50V Vce, 100mA Ic, 100MHz ft, SOT-363 package, Tape & Reel.

Maxim Integrated Simple Swapper™ hot swap controller, MAX5903LBEUT+T, 9V to 72V supply, SOT-23-6 package, -40°C to 85°C, active production.

Analog Devices MAX5214GUA+T, 14-bit voltage-output String DAC, 8-uMAX/uSOP package, single-supply 2.7 V to 5.5 V, SPI/DSP interface, 18 µs settling time, -40°C to 105°C.

STMicroelectronics PowerMESH™ IGBT, STGD7NB60ST4, 600 V Vces, 15 A Ic, 55 W max power, DPAK surface-mount package, Tape & Reel.

STMicroelectronics PowerMESH™ IGBT, STGF10NB60SD, 600 V collector-emitter breakdown, 23 A continuous collector, 25 W max, TO-220-3 Full Pack through-hole, -55°C to 150°C junction.

STMicroelectronics STGWT60H65FB, Trench Field Stop IGBT, 650 V Vces, 80 A Ic, 375 W, TO-3P-3, Through Hole, Tube.

Analog Devices ADM707ARZ-REEL, Simple Reset/Power-On Reset, Reset Active High/Active Low, Push-Pull Output, 160ms Minimum Reset Timeout, 4.65V Threshold, 8-SOIC, -40°C to 85°C.

Analog Devices Simple Swapper™ Hot Swap Controller, MAX5902LCEUT, 9V ~ 72V supply, 1-channel, SOT-23-6, Latched Fault, Thermal Limit, UVLO.

STMicroelectronics TIP122FP NPN Darlington transistor, 100 V Vce, 5 A Ic, 1000 min hFE at 3 A, TO-220-3 Full Pack, 2 W, 150°C TJ.

onsemi FODM214R2, series FODM214, single-channel phototransistor optocoupler, 3750Vrms isolation, 4-SOIC surface-mount package, AC/DC input, 20%–400% CTR at 1 mA, -55°C to 110°C operating range.

Toshiba Semiconductor TLP185(GR-TPL,SE), single-channel DC-input transistor-output optoisolator, 3750Vrms isolation, 100% to 300% CTR at 5mA, 6-SOIC-4 surface-mount package, -55°C to 110°C operating range.

Texas Instruments TPS628501DRLR, step-down buck regulator, 1 A output, adjustable 0.6–5.5 V, 1.8–4 MHz switching, SOT-583 package.

Texas Instruments 4000B series, NAND Gate, 4-circuit, 2-input, Schmitt Trigger, Through Hole, 14-DIP (0.300", 7.62mm), 3V ~ 18V supply, -55°C ~ 125°C.

Microchip Technology DSC1001CI5-060.0000, XO (Standard) MEMS oscillator, 60 MHz CMOS output, ±10 ppm stability, 1.8V–3.3V supply, AEC-Q100 qualified, -40°C to 85°C, 4-SMD no-lead package.

Texas Instruments PCF8574ANG4, 8-bit I²C-bus I/O expander, 100 kHz clock, 2.5 V to 6 V supply, push-pull outputs, interrupt output, 16-PDIP package, -40°C to 85°C.

STMicroelectronics SuperMESH™ N-Channel MOSFET, STD3NK60Z-1, 600 V drain-source, 2.4 A continuous drain, 3.6 Ohm Rds(on) at 1.2 A, 10 V gate drive, 11.8 nC gate charge, I-PAK through-hole package, -55°C to 150°C junction temperature.

Infineon BCR 192 series PNP pre-biased transistor, SC-75 / SOT-416 package, 50 V Vce, 100 mA Ic, 250 mW, 200 MHz ft, with integrated 22 kΩ base resistor and 47 kΩ base-emitter resistor.

Toshiba Semiconductor RN4988 series pre-biased dual transistor, 1 NPN + 1 PNP, SOT-363 surface-mount package, 50 V collector-emitter breakdown, 100 mA collector current, 200 mW power dissipation, 22 kΩ base resistor, 47 kΩ emitter-base resistor.

Infineon BCR505E6778HTSA1 NPN pre-biased transistor, 500 mA collector current, 50 V VCEO, 2.2 kΩ base resistor (R1), 10 kΩ emitter-base resistor (R2), 100 MHz transition frequency, PG-SOT23 package, Tape & Reel.

ROHM UMG8NTR — dual NPN pre-biased (bias resistor type) transistor, 50 V VCEO, 100 mA Ic, 4.7 kΩ base / 47 kΩ base-emitter resistors, 250 MHz fT, 150 mW, surface-mount UMT5 (SOT-353) package, ROHS3 compliant.

Infineon BCR 185T E6327 PNP pre-biased digital transistor, SC-75 SOT-416 surface-mount package, 100 mA collector current, 50 V Vce breakdown, 200 MHz transition frequency, built-in 10 kΩ base resistor and 47 kΩ emitter-base resistor.

ROHM EMG5T2R dual NPN pre-biased transistor, 250 MHz transition frequency, 150 mW max power, 50 V VCEO, 10 kΩ base resistor, 47 kΩ emitter-base resistor, EMT5 surface-mount package.

Infineon BCR 119F E6327 NPN pre-biased transistor, 50 V Vce, 100 mA Ic, 150 MHz fT, 4.7 kΩ base resistor, SOT-723, 250 mW.

Infineon BCR166E6327 PNP pre-biased transistor, 50 V VCEO, 100 mA IC, 160 MHz fT, 4.7 kΩ base resistor, 47 kΩ emitter-base resistor, PG-SOT23-3-11 package.

Infineon BCR 199F E6327 PNP pre-biased transistor, 50 V Vce, 70 mA Ic, 200 MHz ft, 47 kΩ base resistor, SOT-723 surface-mount package, Tape & Reel.

Toshiba Semiconductor RN1132MFV,L3F NPN pre-biased transistor, 50 V VCEO, 100 mA IC, 150 mW power dissipation, SOT-723 surface-mount package, integrated 200 kΩ base resistor (R1).

ROHM DTB123YCHZGT116 PNP pre-biased digital transistor, 500 mA collector current, 200 MHz transition frequency, built-in 2.2 kΩ base resistor and 10 kΩ emitter-base resistor, SOT-23-3 package, AEC-Q101 qualified.

Toshiba RN2712JE(TE85L,F) dual PNP pre-biased transistor, 50 V VCEO, 100 mA Ic, 200 MHz fT, 22 kΩ base resistor, SOT-553 package, surface mount.

ROHM Semiconductor UMH33NTN, dual NPN pre-biased (digital) transistor, 400 mA collector current, 20 V Vce, 2.2 kΩ base resistor, 150 mW, surface-mount SOT-363 (UMT6) package.

Infineon BCR108E6433HTMA1 NPN pre-biased transistor, 100 mA collector current, 50 V Vce breakdown, 170 MHz transition frequency, integrated 2.2 kΩ base resistor and 47 kΩ emitter-base resistor, SOT-23-3 package, 200 mW power dissipation, NRND lifecycle.

Infineon BCR116E6393HTSA1 NPN pre-biased transistor, 50 V collector-emitter breakdown, 100 mA collector current, 150 MHz transition frequency, 4.7 kΩ base resistor / 47 kΩ emitter-base resistor, AEC-Q101 qualified, PG-SOT23 package.

Infineon BCR116WE6327BTSA1 NPN pre-biased digital transistor, 50 V VCEO, 100 mA IC, 4.7 kΩ base resistor, 47 kΩ emitter-base resistor, 150 MHz fT, SOT-323 package, 250 mW power dissipation.

Infineon BCR116WH6327XTSA1 NPN pre-biased digital transistor, 50 V VCEO, 100 mA Ic, 250 mW max, SC-70 SOT-323 package, built-in 4.7 kΩ base resistor and 47 kΩ emitter-base resistor.

Infineon BCR 119T E6327 NPN pre-biased transistor, 50 V V(BR)CEO, 100 mA Ic, 150 MHz fT, 4.7 kΩ base resistor, SC-75 SOT-416 package, 250 mW power dissipation.

Infineon BCR119WH6327 NPN Pre-Biased Transistor, 50 V VCEO, 100 mA IC, 4.7 kΩ base resistor, 150 MHz, 250 mW, SC-70/SOT-323 package, surface mount, active.

Infineon BCR129E6327 NPN pre-biased transistor, 50 V VCEO, 100 mA Ic, 150 MHz fT, 10 kΩ base resistor, 200 mW, SOT-23-3 package, active.

Infineon BCR129SE6327, dual PNP pre-biased transistor, 50 V VCEO, 100 mA IC, 10 kΩ base resistor, 150 MHz fT, SOT-23-3 package, 250 mW, active.

Infineon BCR129WH6327 NPN pre-biased transistor, 50 V VCEO, 100 mA Ic, 150 MHz transition frequency, 10 kΩ base resistor, SC-70 SOT-323 package, surface mount.

Infineon BCR 135 B6327 NPN pre-biased digital transistor, 50 V Vce, 100 mA Ic, 150 MHz ft, 10 kΩ base resistor, 47 kΩ base-emitter resistor, SOT-23 package, 200 mW power dissipation.

Infineon BCR135E6327HTSA1 NPN pre-biased digital transistor, 100 mA collector current, 50 V Vce, 10 kΩ base resistor, 47 kΩ base-emitter resistor, 150 MHz transition frequency, SOT-23-3 package, 200 mW power dissipation.

Infineon BCR135E6433 NPN pre-biased transistor, 50 V VCEO, 100 mA IC, 10 kΩ base resistor, 47 kΩ emitter-base resistor, 150 MHz transition frequency, SOT-23-3 package, 200 mW power dissipation.