Skip to main content
ROHM Semiconductor UMH33NTN — Memory (DRAM / SRAM / Flash / EEPROM)
ROHM Semiconductor

UMH33NTN Dual NPN Pre-Biased Transistor, 400 mA, 20 V

MPNUMH33NTN
End of Life

ROHM Semiconductor UMH33NTN, dual NPN pre-biased (digital) transistor, 400 mA collector current, 20 V Vce, 2.2 kΩ base resistor, 150 mW, surface-mount SOT-363 (UMT6) package.

$0.55Ref. price · indicative, final on quote
UMH33NTN datasheet
Packaging6-TSSOP, SC-88, SOT-363
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

UMH33NTN Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET type2 NPN - Pre-Biased (Dual)
Voltage - collector emitter breakdown20V
Current - collector (Ic)400mA
Current - collector cutoff500nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce820 @ 10mA, 5V
Power - max150mW
Frequency35MHz
PackageTape & Reel (TR); Cut Tape (CT)
Case6-TSSOP, SC-88, SOT-363
Resistor - base (R1)2.2kOhms
Vce saturation (Max) @ ib, ic100mV @ 3mA, 30mA

Product details

Dual NPN pre-biased transistor in SOT-363

The UMH33NTN from ROHM Semiconductor is a dual NPN pre-biased (digital) transistor array in a 6-pin SOT-363 surface-mount package. Each transistor integrates a 2.2 kΩ base resistor (R1), eliminating the need for an external bias resistor and saving board space in high-density designs. With a maximum collector current of 400 mA and a collector-emitter breakdown voltage of 20 V, it suits low-side switching of relays, LEDs, small motors, and logic-level interface circuits in consumer and industrial control applications.

ROHS3 compliant.

Key ratings and their design impact

The 2.2 kΩ base resistor sets the input threshold and saturation drive. At 5 V logic, base current is roughly (5 V – 0.7 V) / 2.2 kΩ ≈ 2 mA, enough to saturate the transistor with a collector load up to 30 mA (Vce(sat) max 100 mV at 3 mA base, 30 mA collector). The 400 mA continuous collector rating and 150 mW power dissipation limit define the load budget — at 20 V Vce, derate continuous current to stay within the package thermal ceiling. The 35 MHz transition frequency is adequate for PWM up to a few hundred kHz.

Frequently asked questions

What is the closest functional equivalent to UMH33NTN?

The UMH37NTN is a direct sibling — same dual NPN pre-biased topology, same package (SOT-363), same 400 mA collector rating, same 20 V Vce. The key difference is the base resistor: UMH37NTN uses 10 kΩ instead of 2.2 kΩ, which shifts the input threshold higher and reduces base drive current. For a drop-in replacement that preserves the 2.2 kΩ base resistor, no exact second-source is listed; check the UMH10NTN if a 50 V rating and lower current (100 mA) are acceptable.