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Infineon Technologies BCR135E6433 — Discrete Semiconductors
Infineon Technologies

BCR135E6433 NPN Pre-Biased Transistor, 50V, 100mA, SOT-23

MPNBCR135E6433
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Infineon BCR135E6433 NPN pre-biased transistor, 50 V VCEO, 100 mA IC, 10 kΩ base resistor, 47 kΩ emitter-base resistor, 150 MHz transition frequency, SOT-23-3 package, 200 mW power dissipation.

$0.0300Ref. price · indicative, final on quote
BCR135E6433 datasheet
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Specifications

BCR135E6433 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce70 @ 5mA, 5V
Power - max200 mW
Frequency150 MHz
PackageBulk
CaseTO-236-3, SC-59, SOT-23-3
Resistor - base (R1)10 kOhms
Resistor - emitter base (R2)47 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

Pre-biased NPN in a SOT-23 — what the ratings mean

The Infineon BCR135E6433 is an NPN pre-biased transistor in a SOT-23-3 surface-mount package. It integrates a 10 kΩ base resistor (R1) and a 47 kΩ emitter-base resistor (R2), eliminating two external passives from the board. The 50 V collector-emitter breakdown and 100 mA continuous collector current suit low-power switching, relay and LED drivers, and logic-level interface circuits where board space is tight.

150 MHz transition frequency — switching speed for the application

With a transition frequency of 150 MHz, this part handles switching up into the low-MHz range — think PWM dimming, DC-DC converter gate drive, or serial bus level shifting. The 300 mV saturation voltage at 500 µA base / 10 mA collector keeps conduction losses low in the on-state.

Frequently asked questions

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