Pre-biased NPN with integrated resistor divider
The Infineon BCR505E6778HTSA1 is an NPN pre-biased transistor in a SOT-23 package, integrating a 2.2 kOhm base resistor (R1) and a 10 kOhm emitter-base resistor (R2) to form a complete switching stage with minimal external components. Rated for a collector current of 500 mA and a collector-emitter breakdown voltage of 50 V, it suits relay and solenoid drivers, low-power switching loads, and interface circuits where board space is tight.
Last Buy — secure stock now
This part carries a Last Buy lifecycle status, meaning the manufacturer has scheduled end-of-production. Any remaining factory stock is being allocated; once exhausted, the part will not be manufactured again. For a production BOM that depends on this exact pre-biased transistor, the window to secure inventory is closing.
Switching performance and saturation drive
With a minimum DC current gain of 70 at 50 mA collector current and 5 V VCE, and a VCE(sat) of 300 mV at 2.5 mA base current and 50 mA collector current, the BCR505E6778HTSA1 delivers a well-defined saturation voltage for logic-level loads. The 100 MHz transition frequency supports switching applications up to several MHz, though the integrated base resistor limits the base drive current and thus the switching speed in high-current pulses.