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Infineon Technologies BCR 119T E6327 — Discrete Semiconductors
Infineon Technologies

Infineon BCR 119T E6327 NPN Pre-Biased Transistor, 50 V

MPNBCR 119T E6327
End of Life

Infineon BCR 119T E6327 NPN pre-biased transistor, 50 V V(BR)CEO, 100 mA Ic, 150 MHz fT, 4.7 kΩ base resistor, SC-75 SOT-416 package, 250 mW power dissipation.

BCR 119T E6327 datasheet
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Specifications

BCR 119T E6327 Technical Specifications
ParameterValue
Mounting typeSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce120 @ 5mA, 5V
Power - max250 mW
Frequency150 MHz
PackageTape & Reel (TR)
CaseSC-75, SOT-416
Resistor - base (R1)4.7 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

Pre-biased NPN in a compact SC-75 package

The BCR 119T E6327: The Infineon BCR 119T is an NPN pre-biased transistor that integrates a 4.7 kΩ base resistor (R1), eliminating the need for an external bias resistor in low-current switching and interface circuits. It is housed in the tiny SC-75 (SOT-416) surface-mount package, making it suitable for space-constrained designs such as portable electronics, sensor interfaces, and logic-level level shifters.

50 V breakdown and 100 mA collector current

With a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA, this part handles typical low-power switching loads—relay coils, small solenoids, LED drivers—where the supply rail stays under 50 V. The 150 MHz transition frequency supports switching up to low-MHz range, adequate for most GPIO-driven loads and low-speed PWM.

Frequently asked questions

What is the PNP equivalent of BCR 119T E6327?

Infineon offers complementary PNP pre-biased transistors in similar packages, such as the BCR 119T's PNP counterpart (e.g., BCR 119S series). Check the Infineon portfolio for a pin-compatible PNP with matching resistor values.