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Infineon Technologies BCR119WH6327 — Discrete Semiconductors

Infineon BCR119WH6327 NPN Pre-Biased Transistor, 50 V

MPNBCR119WH6327
Active

Infineon BCR119WH6327 NPN Pre-Biased Transistor, 50 V VCEO, 100 mA IC, 4.7 kΩ base resistor, 150 MHz, 250 mW, SC-70/SOT-323 package, surface mount, active.

$0.0400Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

BCR119WH6327 specifications
ParameterValue
MountingSurface Mount
FET typeNPN - Pre-Biased
Voltage - collector emitter breakdown50 V
Current - collector (Ic)100 mA
Current - collector cutoff100nA (ICBO)
DC current gain (hFE) (Min) @ ic, vce120 @ 5mA, 5V
Power - max250 mW
Frequency - transition150 MHz
PackageBulk
CaseSC-70, SOT-323
Resistor - base (R1)4.7 kOhms
Vce saturation (Max) @ ib, ic300mV @ 500µA, 10mA

Product details

Pre-biased NPN in a compact SOT-323

It's designed to replace the discrete resistor + BJT pair in low-current switching and driver stages, saving board space and reducing pick-and-place cost.

Switching performance and bias design

The integrated base resistor (4.7 kΩ) sets the base current for a given drive voltage, simplifying the input stage. Minimum DC current gain is 120 at 5 mA, 5 V, ensuring adequate drive for loads up to 100 mA. The 150 MHz transition frequency supports switching in the low-MHz range. Saturation voltage is 300 mV max at 500 µA base, 10 mA collector — low enough to keep dissipation minimal in saturated switches. Collector cutoff current is just 100 nA, useful in battery-operated circuits where off-state leakage matters.

Maximum power dissipation is 250 mW for the SOT-323 package. In a 100 mA switching application, ensure the collector-emitter voltage drop times current stays well under this limit, or derate for ambient temperature above 25 °C.

Frequently asked questions

Is BCR119WH6327 obsolete or active?

BCR119WH6327 is listed as active. No discontinuation or last-time-buy has been announced by Infineon.