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STMicroelectronics STGWT60H65FB

STGWT60H65FB IGBT 650V 80A TO-3P, Trench Field Stop

MPNSTGWT60H65FB
End of Life

STMicroelectronics STGWT60H65FB, Trench Field Stop IGBT, 650 V Vces, 80 A Ic, 375 W, TO-3P-3, Through Hole, Tube.

$4.98Ref. price · indicative, final on quote
PackagingTO-3P-3, SC-65-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STGWT60H65FB specifications
ParameterValue
IGBT typeTrench Field Stop
Input typeStandard
MountingThrough Hole
Voltage - collector emitter breakdown650 V
Current - collector (Ic)80 A
Current - collector pulsed240 A
Power - max375 W
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Gate charge306 nC
CaseTO-3P-3, SC-65-3
Test condition400V, 60A, 5Ohm, 15V
Switching energy1.09mJ (on), 626µJ (off)
Td (on/off) @ 25°C51ns/160ns
Vce(on) (Max) @ vge, ic2.3V @ 15V, 60A

Product details

The STMicroelectronics STGWT60H65FB is a 650 V, 80 A Trench Field Stop IGBT in a TO-3P through-hole package. It is designed for medium-frequency hard-switching applications like motor drives, inverters, and welding machines where low conduction loss and ruggedness matter.

Gate charge and driver matching

With a gate charge of 306 nC, this part needs a gate driver that can source and sink enough peak current to switch within the rated 51 ns turn-on and 160 ns turn-off delays. A standard 15 V gate drive with a 5 Ohm external gate resistor is the test condition; if your bench kit only has a low-current driver, expect slower edges and higher switching losses. The switching energy numbers — 1.09 mJ on, 626 µJ off at 400 V, 60 A — give a realistic loss budget for thermal design in a 175 °C max junction environment.

The TO-3P package (SC-65-3 variant) is a standard through-hole power package with three leads. It bolts to a heatsink through the mounting hole in the tab — no insulator needed if the heatsink is grounded, but a thermal pad or mica washer is typical for isolated mounting. The tube shipment means the leads are protected during handling; clip the tube open over a bench mat to avoid ESD damage before soldering.

The TO-3P package is widely stocked across the channel.

Frequently asked questions

What is the gate charge of STGWT60H65FB?

The gate charge is 306 nC, which determines the gate-driver peak current needed for clean switching at the rated 51 ns turn-on delay.

How does STGWT60H65FB compare to similar IGBTs like STGWT60H65DF?

The STGWT60H65DF is a different variant in the same voltage/current class, but the 'FB' suffix on this part indicates the Trench Field Stop type with standard input logic. The 'DF' variant may use a different gate structure or co-pack diode. Check the specific switching energy and Vce(on) curves in each datasheet to match your application's loss targets.