600 V, 23 A — where this IGBT sits in the kit
The STGF10NB60SD is an STMicroelectronics PowerMESH™ IGBT rated for 600 V collector-emitter breakdown and 23 A continuous collector current, in a TO-220FP full-pack through-hole package. It is a standard-input N-channel device built for hard-switched power stages — motor drives, UPS inverters, PFC boost stages — where the 600 V blocking voltage gives margin on a 400 V DC bus.
Switching losses — the off-energy is the number to watch
Under the test condition of 480 V, 10 A, 1 kOhm gate resistor, and 15 V gate drive, the turn-on switching energy is 600 µJ and the turn-off energy is 5 mJ. The off-energy dominates by nearly an order of magnitude, which means this part runs hottest during the turn-off edge — a snubber or a slower gate-drive turn-off can shift some of that loss, but the thermal design should budget for the 5 mJ per pulse at the target switching frequency. Turn-on delay is 700 ns, turn-off delay is 1.2 µs at 25 °C junction.
On-state voltage and gate drive
Vce(on) is 1.75 V maximum at 15 V gate drive and 10 A collector current — a typical conduction loss for a 600 V trench IGBT in this current class. The total gate charge is 33 nC, so a standard MCU GPIO through a 1 kOhm resistor will switch it, but the 700 ns/1.2 µs delays mean the gate driver should source at least 0.5 A peak to keep the switching edges clean.
Package — TO-220FP full-pack, no heatsink isolation worries
The TO-220FP full-pack moulding isolates the tab electrically — no insulating pad or washer needed when bolting to a grounded heatsink. The through-hole mounting is field-serviceable with a standard soldering iron; the three leads are spaced at 2.54 mm pitch, easy to probe and replace on site.