Pre-biased NPN with integrated 200 kΩ base resistor
The RN1132MFV,L3F is a Toshiba NPN pre-biased transistor in a SOT-723 package (VESM supplier device package). It integrates a 200 kOhm base resistor (R1), eliminating one external component per channel and saving board space in high-density layouts. The built-in resistor biases the base directly from a microcontroller GPIO or logic output without an additional series resistor.
hFE and saturation performance at low current
Minimum DC current gain (hFE) is 120 at Ic = 1 mA, Vce = 5 V. This gain floor ensures reliable saturation in low-current switching. Vce saturation is specified at 300 mV maximum with Ib = 500 µA and Ic = 5 mA, confirming the transistor can saturate fully even with the limited base drive available through the 200 kOhm resistor from a standard logic output.