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Rohm RN2114MFV,L3F PNP pre-biased transistor, 50 V Vce breakdown, 100 mA Ic, integrated R1=1 kΩ and R2=10 kΩ bias resistors, SOT-723 (VESM) surface-mount package, 150 mW max power dissipation.

Toshiba RN2115MFV,L3F PNP pre-biased transistor, 50 V collector-emitter breakdown, 100 mA continuous collector current, SOT-723 surface-mount package, built-in bias resistors R1=2.2 kΩ and R2=10 kΩ.

Toshiba RN2106MFV,L3XHF(CT, Automotive AEC-Q101, PNP Pre-Biased Transistor, 50 V VCEO, 100 mA Ic, 150 mW, SOT-723 (VESM) package, built-in bias resistors R1=4.7 kΩ, R2=47 kΩ.

Infineon BCR133WE6327 bias resistor transistor, series *, Bulk package, active lifecycle stage.

Infineon BCR505E6778HTSA1 NPN pre-biased transistor, 500 mA collector current, 50 V VCEO, 2.2 kΩ base resistor (R1), 10 kΩ emitter-base resistor (R2), 100 MHz transition frequency, PG-SOT23 package, Tape & Reel.

NV VARIABLE RESISTOR/SWITCH

Toshiba RN2503(TE85L,F) dual PNP pre-biased transistor, SC-74A SOT-753, 50V VCEO, 100mA Ic, 300mW, 200MHz fT, 22k/22k bias resistors.

Toshiba RN1911FE,LF(CT, dual NPN pre-biased transistor, 50V collector-emitter breakdown, 100mA collector current, 250MHz transition frequency, 10kΩ base resistor, SOT-563/SOT-666 package, ES6 marking.

ROHM UMG8NTR — dual NPN pre-biased (bias resistor type) transistor, 50 V VCEO, 100 mA Ic, 4.7 kΩ base / 47 kΩ base-emitter resistors, 250 MHz fT, 150 mW, surface-mount UMT5 (SOT-353) package, ROHS3 compliant.

Analog Devices DS1856E-020 dual temp-controlled resistor, discrete semiconductors, active lifecycle, bulk package.

Maxim Integrated DS1856B-020 dual temp-controlled resistor, Bulk package, active production.

Analog Devices DS1848E-010 dual temperature-controlled resistor, Active lifecycle, Bulk package, RoHS non-compliant, Discrete Semiconductors.

Analog Devices MAX5490 series matched resistor-divider network, MAX5490MB02000, 100k resistance, ±0.025% tolerance, 35ppm/°C tempco, SOT-23-3 surface-mount package, Bulk.

Infineon BCR 112L3 E6327 NPN pre-biased transistor, 50 V VCEO, 100 mA IC, 4.7 kΩ base and emitter-base resistors, 140 MHz transition frequency, PG-TSLP-3-4 package, Tape & Reel.

Infineon BCR119WH6327XTSA1 NPN pre-biased transistor, SC-70/SOT-323 package, 4.7 kOhm base resistor, 100 mA collector current, 50 V Vce, 150 MHz transition frequency.

Infineon BCR 133L3 E6327 NPN pre-biased transistor, 50 V collector-emitter breakdown, 100 mA collector current, 250 mW power dissipation, 10 kOhm base and emitter-base resistors, 130 MHz transition frequency, SC-101/SOT-883 package.

Infineon BCR 148 B6327 NPN pre-biased transistor, 50 V VCEO, 100 mA Ic, 100 MHz transition frequency, 47 kOhm base and emitter-base resistors, SOT-23-3 package, Tape & Reel.

Infineon BCR 179T E6327 PNP pre-biased transistor, 100 mA collector current, 50 V VCEO, 10 kΩ base resistor, 150 MHz fT, SC-75 SOT-416 surface-mount package.

Infineon BCR 192 series PNP pre-biased transistor, SC-75 / SOT-416 package, 50 V Vce, 100 mA Ic, 250 mW, 200 MHz ft, with integrated 22 kΩ base resistor and 47 kΩ base-emitter resistor.

Toshiba RN1702,LF dual NPN pre-biased transistor, 250 MHz transition frequency, 100 mA collector current, 50 V Vce breakdown, 10kΩ base and emitter resistors, 200 mW power dissipation, USV package.

Toshiba Semiconductor RN2907 series dual PNP pre-biased transistor, 50 V, 100 mA, 200 mW, 10 kOhm base resistor, 47 kOhm base-emitter resistor, US6 surface-mount package, Tape & Reel.

Toshiba RN2904FE,LF dual PNP pre-biased transistor, 50V VCEO, 100mA IC, 47kΩ base and emitter resistors, 200MHz fT, SOT-563/ES6 package, surface mount.

Toshiba Semiconductor RN4906FE,LF(CT dual NPN/PNP pre-biased transistor, SOT-563 surface-mount, 100 mA collector, 50 V, 100 mW, built-in bias resistors 4.7k / 47k.

Toshiba RN2304,LXHF PNP pre-biased transistor, 50 V collector-emitter breakdown, 100 mA collector current, 47 kOhm base and emitter resistors, SC-70 SMD package, Tape & Reel.

Maxim Integrated DS3904U-020/TR, NV variable resistor/switch, Bulk package, active production.

Infineon BCR133TE6327 NPN pre-biased digital transistor, 50 V VCEO, 100 mA Ic, 10 kΩ base and emitter-base resistors, 130 MHz transition frequency, SOT-23-3 package, active.

Infineon BCR141WH6327 NPN pre-biased transistor, 50 V VCEO, 100 mA Ic, 130 MHz fT, 22 kΩ base and emitter resistors, SC-70/SOT-323 package, surface mount.

Infineon BCR166W PNP pre-biased transistor, SC-70/SOT-323 package, 50 V Vce, 100 mA Ic, 250 mW, 160 MHz transition frequency, built-in 4.7 kOhm base and 47 kOhm emitter-base resistors.

Infineon BCR 185T E6327 PNP pre-biased digital transistor, SC-75 SOT-416 surface-mount package, 100 mA collector current, 50 V Vce breakdown, 200 MHz transition frequency, built-in 10 kΩ base resistor and 47 kΩ emitter-base resistor.

Texas Instruments bqTINY™ III series, BQ24038RHLR, single-cell Li-Ion/Polymer linear charger IC, max charge current 1.5A, programmable via external resistor, USB interface, 20-VFQFN exposed pad package, active production.

Toshiba Semiconductor RN2701 series dual PNP pre-biased transistor (BRT), 5-TSSOP/SC-70-5/SOT-353 package, 200mW, 50V Vce, 100mA Ic, 200MHz Ft, 4.7kohm base & emitter resistors.

Toshiba RN2961(TE85L,F) dual PNP pre-biased transistor, 50V VCEO, 100mA IC, 200mW Pd, 4.7kΩ base and emitter-base resistors, 200MHz fT, US6 package, Tape & Reel.

Toshiba Semiconductor RN4988 series pre-biased dual transistor, 1 NPN + 1 PNP, SOT-363 surface-mount package, 50 V collector-emitter breakdown, 100 mA collector current, 200 mW power dissipation, 22 kΩ base resistor, 47 kΩ emitter-base resistor.

Toshiba RN2413,LXHF PNP pre-biased transistor, 50V VCEO, 100mA IC, 200MHz fT, 47kΩ base resistor, AEC-Q101, SOT-23-3 package.

Toshiba RN1706,LF dual NPN pre-biased transistor, 50V VCEO, 100mA IC, 250MHz fT, built-in 4.7kΩ base resistor and 47kΩ emitter-base resistor, USV (5-TSSOP/SC-70-5/SOT-353) package, surface mount.

Toshiba RN1704,LF dual NPN pre-biased transistor, 50 V VCEO, 100 mA IC, 250 MHz fT, 47 kΩ base and emitter resistors, SOT-353 (USV) package, surface mount.

Analog Devices DS1856B-002, dual temp-controlled resistor, Discrete Semiconductors, active lifecycle, Bulk package, RoHS non-compliant.

Texas Instruments BQ25101YFPR, single-cell Li-Ion/Polymer linear charger IC, 250 mA max charge current, programmable via external resistor, 6-XFBGA DSBGA package, 0°C to 125°C junction range.

Infineon BCR 119F E6327 NPN pre-biased transistor, 50 V Vce, 100 mA Ic, 150 MHz fT, 4.7 kΩ base resistor, SOT-723, 250 mW.

Infineon BCR133SB6327XT dual NPN pre-biased transistor array, 50V Vce, 100mA Ic, 130MHz fT, 10k base/emitter resistors, SOT-363 package, 250mW power dissipation.

Infineon BCR135WE6327 NPN pre-biased digital transistor, SC-70 SOT-323 package, 100 mA collector current, 50 V VCEO, 150 MHz transition frequency, built-in 10 kOhm base and 47 kOhm emitter-base resistors.

Infineon BCR185WH6327 PNP pre-biased transistor, Automotive AEC-Q101, SC-70/SOT-323, 50 V, 100 mA, 200 MHz, 250 mW, built-in 10 kΩ base and 47 kΩ emitter-base resistors.

Infineon BCR583 digital transistor, silicon NPN with integrated bias resistor, active lifecycle, Bulk shipping medium.

Infineon BCR185SE6327 PNP digital transistor, built-in bias resistors, Bulk package, lifecycle_stage current.

Toshiba Semiconductor RN2504(TE85L,F) dual PNP pre-biased transistor, 50V Vce, 100mA Ic, 300mW, 47kOhm + 47kOhm built-in resistors, SC-74A SOT-753 SMV package, Tape & Reel.

Toshiba Semiconductor RN2110 series PNP pre-biased transistor, 50 V collector-emitter breakdown, 100 mA collector current, 4.7 kOhms base resistor, SC-75 SOT-416 surface-mount package, SSM supplier device package.

Toshiba Semiconductor RN1104 series NPN pre-biased transistor, SC-75 SOT-416 package, 50 V VCEO, 100 mA Ic, 47 kOhm base and emitter resistors, SSM supplier device package.

Toshiba Semiconductor RN1711,LF dual NPN pre-biased transistor, 50V VCEO, 100mA Ic, 200mW, 10kΩ base resistor, SOT-353 surface mount.

Toshiba Semiconductor RN2311 series PNP pre-biased transistor, 50 V collector-emitter breakdown, 100 mA collector current, 10 kOhm base resistor, 200 MHz transition frequency, SC-70 SOT-323 surface-mount package.

ROHM UMB2NTN, dual PNP pre-biased transistor, 50V Vce, 100mA Ic, 47kΩ base/emitter resistors, 250MHz ft, UMT6 (SOT-363) package, surface mount, active.

Toshiba RN2703JE(TE85L,F), dual PNP pre-biased (emitter coupled) transistor, 50V Vce, 100mA Ic, 200MHz ft, 22kΩ base and emitter-base resistors, SOT-553 surface mount package, 100mW max power dissipation.

ROHM EMG5T2R dual NPN pre-biased transistor, 250 MHz transition frequency, 150 mW max power, 50 V VCEO, 10 kΩ base resistor, 47 kΩ emitter-base resistor, EMT5 surface-mount package.

Toshiba RN1701,LF dual NPN pre-biased transistor (BRT), 2 NPN with integrated 4.7kΩ base and emitter-base resistors, 50V Vce, 100mA Ic, 250MHz fT, in SC-70-5 / USV package, surface mount.

Toshiba RN2704JE(TE85L,F) dual PNP pre-biased (emitter-coupled) transistor, 50 V collector-emitter breakdown, 100 mA collector current, 47kΩ base and emitter resistors, 200 MHz transition frequency, SOT-553 package, surface mount.

Toshiba RN1904FE,LXHF(CT, Automotive AEC-Q101, dual NPN pre-biased transistor, 50 V collector-emitter breakdown, 100 mA collector current, 47 kΩ base and emitter-base resistors, 250 MHz transition frequency, SOT-563/ES6 surface-mount package.

Toshiba Semiconductor Automotive AEC-Q101 series, RN4911FE,LXHF(CT, dual 1 NPN 1 PNP pre-biased transistor, 50V VCEO, 100mA Ic, 10kΩ base resistor, ES6 surface mount package.

Infineon BCR 103T E6327 NPN pre-biased transistor, 50 V VCEO, 100 mA Ic, built-in 2.2 kOhm base and emitter-base resistors, SC-75 SOT-416 surface-mount package, 250 mW power dissipation.

Infineon BCR108SE6327BTSA1, dual NPN pre-biased transistor, 50V VCEO, 100mA IC, 250mW, 170MHz, 2.2kΩ base resistor, 47kΩ emitter-base resistor, SOT-363 package.

Infineon BCR10PNB6327XT, dual NPN/PNP pre-biased transistor, 50V Vce, 100mA Ic, 130MHz fT, 10kΩ base and emitter resistors, SOT-363 package, 250mW power dissipation.

Infineon BCR10PNH6730 dual pre-biased transistor, 1 NPN + 1 PNP, 50V VCEO, 100mA Ic, 10kΩ base and emitter-base resistors, 130MHz fT, SOT-363 package, 250mW power dissipation.