One package, two transistors, no external bias resistors
The Infineon BCR10PNB6327XT packs one NPN and one PNP pre-biased transistor into a single SOT-363 package. Each transistor has a 10kΩ resistor in series with the base and another 10kΩ resistor between base and emitter, so you don't need to add those resistors on the board. The collector-emitter breakdown is rated at 50V, and each side can handle up to 100mA continuous collector current.
130 MHz transition frequency — fast enough for most switching and level-shifting
With a transition frequency of 130MHz, this dual transistor handles switching applications up into the low-MHz range comfortably. The 300mV saturation voltage at 500µA base current and 10mA collector current means low on-state losses in digital logic level shifters, relay drivers, and small-signal inverter stages.
Active lifecycle — no end-of-life concern for new designs
No last-time-buy or obsolescence notice to plan around for ongoing builds or new board spins.